Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings 2023 IEEE 50th Photovoltaic Specialists Conference |
| Untertitel | PVSC |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seitenumfang | 4 |
| ISBN (elektronisch) | 9781665460590 |
| ISBN (Print) | 978-1-6654-6060-6 |
| Publikationsstatus | Veröffentlicht - 2023 |
| Veranstaltung | 50th IEEE Photovoltaic Specialists Conference, PVSC 2023 - San Juan, USA / Vereinigte Staaten Dauer: 11 Juni 2023 → 16 Juni 2023 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
For the industrialization of large area perovskite silicon tandem solar cells a low-resistance and low-cost contact metallization needs to be established. On the one hand, curing or even firing temperatures as applied for screen-printing metallization of Si single junction cells are too high for perovskites. On the other hand, screen-printing pastes with very low curing temperatures have a reduced specific conductivity. Thus, they require wide Ag consuming contacts for a sufficiently low resistance. We present a concept which comprises screen-printing the front contacts onto an isolating layer located on the uppermost layer of the bottom cell before the perovskite top cell is applied. This allows higher curing temperatures and thus lower finger resistivities than in a low curing temperature screen-printing process on a perovskite solar cell. Furthermore, this concept avoids mechanical pressure on the soft perovskite material during cell interconnection. We expect that the latter aspect is beneficial to prevent shunting issues. The concept is shown for perovskite single junction solar cells in a proof-of-concept state. Furthermore, the advantage of higher curing temperatures regarding the Ag finger line resistance and the Ag/ITO contact resistivity is verified by an improvement due to additional sintering to T= 330 °C and T= 260 °C after curing, respectively.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- RIS
Proceedings 2023 IEEE 50th Photovoltaic Specialists Conference: PVSC. Institute of Electrical and Electronics Engineers Inc., 2023. (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Perovskite/silicon tandem solar cells with front side metallization applied prior to top cell fabrication enabling high curing temperatures
AU - Baumann, Sara
AU - Raugewitz, Annika
AU - Haase, Felix
AU - Wietler, Tobias
AU - Peibst, Robby
AU - Köntges, Marc
N1 - Funding Information: The authors thank the German Federal Environmental Foundation (DBU) and the state of Lower Saxony for their funding. The solar cell processing was carried out within the projects P3T (grant number 03EE1017B), TOP (03EE1080C) and APERO (03EE1113B) supported by the Federal Ministry for Economic Affairs and Climate Action (BMWK). Funding Information: ACKNOWLEDGEMENT The authors thank the German Federal Environmental Foundation (DBU) and the state of Lower Saxony for their funding. The solar cell processing was carried out within the projects P3T (grant number 03EE1017B), TOP (03EE1080C) and APERO (03EE1113B) supported by the Federal Ministry for Economic Affairs and Climate Action (BMWK). The authors thank L. Brockmann, J. Strey, M. C. Turcu, R. Clausing and R. Winter (all from ISFH) for perovskite solar cell processing.
PY - 2023
Y1 - 2023
N2 - For the industrialization of large area perovskite silicon tandem solar cells a low-resistance and low-cost contact metallization needs to be established. On the one hand, curing or even firing temperatures as applied for screen-printing metallization of Si single junction cells are too high for perovskites. On the other hand, screen-printing pastes with very low curing temperatures have a reduced specific conductivity. Thus, they require wide Ag consuming contacts for a sufficiently low resistance. We present a concept which comprises screen-printing the front contacts onto an isolating layer located on the uppermost layer of the bottom cell before the perovskite top cell is applied. This allows higher curing temperatures and thus lower finger resistivities than in a low curing temperature screen-printing process on a perovskite solar cell. Furthermore, this concept avoids mechanical pressure on the soft perovskite material during cell interconnection. We expect that the latter aspect is beneficial to prevent shunting issues. The concept is shown for perovskite single junction solar cells in a proof-of-concept state. Furthermore, the advantage of higher curing temperatures regarding the Ag finger line resistance and the Ag/ITO contact resistivity is verified by an improvement due to additional sintering to T= 330 °C and T= 260 °C after curing, respectively.
AB - For the industrialization of large area perovskite silicon tandem solar cells a low-resistance and low-cost contact metallization needs to be established. On the one hand, curing or even firing temperatures as applied for screen-printing metallization of Si single junction cells are too high for perovskites. On the other hand, screen-printing pastes with very low curing temperatures have a reduced specific conductivity. Thus, they require wide Ag consuming contacts for a sufficiently low resistance. We present a concept which comprises screen-printing the front contacts onto an isolating layer located on the uppermost layer of the bottom cell before the perovskite top cell is applied. This allows higher curing temperatures and thus lower finger resistivities than in a low curing temperature screen-printing process on a perovskite solar cell. Furthermore, this concept avoids mechanical pressure on the soft perovskite material during cell interconnection. We expect that the latter aspect is beneficial to prevent shunting issues. The concept is shown for perovskite single junction solar cells in a proof-of-concept state. Furthermore, the advantage of higher curing temperatures regarding the Ag finger line resistance and the Ag/ITO contact resistivity is verified by an improvement due to additional sintering to T= 330 °C and T= 260 °C after curing, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85182768195&partnerID=8YFLogxK
U2 - 10.1109/PVSC48320.2023.10359983
DO - 10.1109/PVSC48320.2023.10359983
M3 - Conference contribution
AN - SCOPUS:85182768195
SN - 978-1-6654-6060-6
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - Proceedings 2023 IEEE 50th Photovoltaic Specialists Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 50th IEEE Photovoltaic Specialists Conference, PVSC 2023
Y2 - 11 June 2023 through 16 June 2023
ER -