Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
| Herausgeber/-innen | K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski |
| Seiten | 923-926 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 2003 |
| Extern publiziert | Ja |
| Veranstaltung | 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Dauer: 11 Mai 2003 → 18 Mai 2003 |
Publikationsreihe
| Name | Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Band | A |
Abstract
PERT (passivated emitter, rear totally-diffused) cells on CZ and FZ n-type silicon substrates have demonstrated high efficiencies of 21.1% and 21.9%, respectively. Performance loss has been observed in these cells after over two-year storage. A further loss was observed when these cells were illuminated under one-sun intensity using ELH halogen projection lamps. The lightly doped boron emitters and strong surface depletion might be the cause for such loss, which appear to have an electrostatic origin and to be largely reversible.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Allgemeiner Maschinenbau
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Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Hrsg. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. S. 923-926 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Band A).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Performance instability in N-type pert silicon solar cells
AU - Zhao, Jianhua
AU - Schmidt, Jan
AU - Wang, Aihua
AU - Zhang, Guangchun
AU - Richards, Bryce S.
AU - Green, Martin A.
PY - 2003
Y1 - 2003
N2 - PERT (passivated emitter, rear totally-diffused) cells on CZ and FZ n-type silicon substrates have demonstrated high efficiencies of 21.1% and 21.9%, respectively. Performance loss has been observed in these cells after over two-year storage. A further loss was observed when these cells were illuminated under one-sun intensity using ELH halogen projection lamps. The lightly doped boron emitters and strong surface depletion might be the cause for such loss, which appear to have an electrostatic origin and to be largely reversible.
AB - PERT (passivated emitter, rear totally-diffused) cells on CZ and FZ n-type silicon substrates have demonstrated high efficiencies of 21.1% and 21.9%, respectively. Performance loss has been observed in these cells after over two-year storage. A further loss was observed when these cells were illuminated under one-sun intensity using ELH halogen projection lamps. The lightly doped boron emitters and strong surface depletion might be the cause for such loss, which appear to have an electrostatic origin and to be largely reversible.
UR - http://www.scopus.com/inward/record.url?scp=6344260432&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:6344260432
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 923
EP - 926
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - 3rd World Conference on Photovoltaic Energy Conversion
Y2 - 11 May 2003 through 18 May 2003
ER -