Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | SiliconPV 2019 |
| Untertitel | 9th International Conference on Crystalline Silicon Photovoltaics |
| Herausgeber/-innen | Sebastien Dubois, Stefan Glunz, Pierre Verlinden, Rolf Brendel, Arthur Weeber, Giso Hahn, Marco Poortmans, Christophe Balif |
| Seitenumfang | 6 |
| ISBN (elektronisch) | 9780735418929 |
| Publikationsstatus | Veröffentlicht - 27 Aug. 2019 |
| Veranstaltung | 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019 - Leuven, Belgien Dauer: 8 Apr. 2019 → 10 Apr. 2019 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 2147 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
The efficiency of PERC solar cells is limited by charge carrier recombination at the Ag front contacts on the emitter. To reduce the recombination current, we replaced the conventional continuous Ag contacts by dashed Ag contacts with lengths between 150 µm and 450 µm and a pitch of 600 µm. They are screen-printed using a firing-through Ag paste to establish the contact to the emitter. To provide a current path from the contacts to the busbars, a continuous Ag finger is printed on top using a non-firing through Ag paste with no glass frits or a low content of glass frits. First experiments reveal that the choice of the top Ag paste strongly influences the contact formation. A top Ag paste with a low content of glass frits etches the SiNx layer in between two contacts partially. A top Ag paste with no glass frits intermixes with the bottom paste during fast-firing and thereby dilutes the glass frit content of the bottom paste. As a consequence, the contact formation to the emitter is hindered, resulting in a high contact resistance. The potential of this concept is analyzed using numerical simulations. Depending on the contact resistivity and the fraction of the contacted area on the emitter, the concept can increase the conversion efficiency of future PERC solar cells by up to 0.3%abs.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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SiliconPV 2019: 9th International Conference on Crystalline Silicon Photovoltaics. Hrsg. / Sebastien Dubois; Stefan Glunz; Pierre Verlinden; Rolf Brendel; Arthur Weeber; Giso Hahn; Marco Poortmans; Christophe Balif. 2019. 060001 (AIP Conference Proceedings; Band 2147).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - PERC+ solar cells with screen-printed dashed Ag front contacts
AU - Rudolph, Martin
AU - Kruse, Christian
AU - Wolter, Helge
AU - Wolpensinger, Bettina
AU - Baumann, Ulrike
AU - Bräunig, Sonja
AU - Ripke, Melanie
AU - Falcon, Tom
AU - Brendel, Rolf
AU - Dullweber, Thorsten
N1 - Funding information: This work was funded by the German State of Lower Saxony and the German Federal Ministry of Economics and Energy (BMWi) within the research project “NextStep” under contract 0324171C.
PY - 2019/8/27
Y1 - 2019/8/27
N2 - The efficiency of PERC solar cells is limited by charge carrier recombination at the Ag front contacts on the emitter. To reduce the recombination current, we replaced the conventional continuous Ag contacts by dashed Ag contacts with lengths between 150 µm and 450 µm and a pitch of 600 µm. They are screen-printed using a firing-through Ag paste to establish the contact to the emitter. To provide a current path from the contacts to the busbars, a continuous Ag finger is printed on top using a non-firing through Ag paste with no glass frits or a low content of glass frits. First experiments reveal that the choice of the top Ag paste strongly influences the contact formation. A top Ag paste with a low content of glass frits etches the SiNx layer in between two contacts partially. A top Ag paste with no glass frits intermixes with the bottom paste during fast-firing and thereby dilutes the glass frit content of the bottom paste. As a consequence, the contact formation to the emitter is hindered, resulting in a high contact resistance. The potential of this concept is analyzed using numerical simulations. Depending on the contact resistivity and the fraction of the contacted area on the emitter, the concept can increase the conversion efficiency of future PERC solar cells by up to 0.3%abs.
AB - The efficiency of PERC solar cells is limited by charge carrier recombination at the Ag front contacts on the emitter. To reduce the recombination current, we replaced the conventional continuous Ag contacts by dashed Ag contacts with lengths between 150 µm and 450 µm and a pitch of 600 µm. They are screen-printed using a firing-through Ag paste to establish the contact to the emitter. To provide a current path from the contacts to the busbars, a continuous Ag finger is printed on top using a non-firing through Ag paste with no glass frits or a low content of glass frits. First experiments reveal that the choice of the top Ag paste strongly influences the contact formation. A top Ag paste with a low content of glass frits etches the SiNx layer in between two contacts partially. A top Ag paste with no glass frits intermixes with the bottom paste during fast-firing and thereby dilutes the glass frit content of the bottom paste. As a consequence, the contact formation to the emitter is hindered, resulting in a high contact resistance. The potential of this concept is analyzed using numerical simulations. Depending on the contact resistivity and the fraction of the contacted area on the emitter, the concept can increase the conversion efficiency of future PERC solar cells by up to 0.3%abs.
UR - http://www.scopus.com/inward/record.url?scp=85071523665&partnerID=8YFLogxK
U2 - 10.1063/1.5123861
DO - 10.1063/1.5123861
M3 - Conference contribution
AN - SCOPUS:85071523665
T3 - AIP Conference Proceedings
BT - SiliconPV 2019
A2 - Dubois, Sebastien
A2 - Glunz, Stefan
A2 - Verlinden, Pierre
A2 - Brendel, Rolf
A2 - Weeber, Arthur
A2 - Hahn, Giso
A2 - Poortmans, Marco
A2 - Balif, Christophe
T2 - 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019
Y2 - 8 April 2019 through 10 April 2019
ER -