Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 838-840 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 68 |
| Ausgabenummer | 6 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1996 |
| Extern publiziert | Ja |
Abstract
Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 68, Nr. 6, 01.12.1996, S. 838-840.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries
AU - Schmidt, T.
AU - Tewordt, M.
AU - Haug, R. J.
AU - Klitzing, K. V.
AU - Schönherr, B.
AU - Grambow, P.
AU - Förster, A.
AU - Lüth, H.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.
AB - Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.
UR - http://www.scopus.com/inward/record.url?scp=0039868969&partnerID=8YFLogxK
U2 - 10.1063/1.116550
DO - 10.1063/1.116550
M3 - Article
AN - SCOPUS:0039868969
VL - 68
SP - 838
EP - 840
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 6
ER -