Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 225-228 |
| Seitenumfang | 4 |
| Fachzeitschrift | Chemical Engineering & Technology |
| Jahrgang | 18 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - Aug. 1995 |
| Extern publiziert | Ja |
Abstract
A simple and inexpensive Pbs‐FET with high sensitivity and short response time was developed which consists of a PbS layer on a pH‐sensitive gate of a field effect transistor. The PbS‐layer was prepared with simple wet precipitations technique. The PbS‐FET has about the same selectivities for Pb2+ ‐and for Cu2+ ‐ions, but only slight sensitivity for Cd2+ ‐and Zn2+ ‐ions. The sensor was integrated in a FIA system. By variing the injection time the measuring range varied between 10−1‐10−6 and 10−2‐10−8 mol Pb2+/1. The PbS‐FET‐FIA system is suitable for monitoring of Pb2+ concentrations in drinking water.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Chemische Verfahrenstechnik (insg.)
- Allgemeine chemische Verfahrenstechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
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in: Chemical Engineering & Technology, Jahrgang 18, Nr. 4, 08.1995, S. 225-228.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Pbs-Field-Effect-Transistor for Heavy Metal Concentration Monitoring
AU - Kullick, Thomas
AU - Quack, Ralf
AU - Röhrkasten, Cornelia
AU - Pekeler, Thomas
AU - Scheper, Thomas
AU - Schügerl, Karl
PY - 1995/8
Y1 - 1995/8
N2 - A simple and inexpensive Pbs‐FET with high sensitivity and short response time was developed which consists of a PbS layer on a pH‐sensitive gate of a field effect transistor. The PbS‐layer was prepared with simple wet precipitations technique. The PbS‐FET has about the same selectivities for Pb2+ ‐and for Cu2+ ‐ions, but only slight sensitivity for Cd2+ ‐and Zn2+ ‐ions. The sensor was integrated in a FIA system. By variing the injection time the measuring range varied between 10−1‐10−6 and 10−2‐10−8 mol Pb2+/1. The PbS‐FET‐FIA system is suitable for monitoring of Pb2+ concentrations in drinking water.
AB - A simple and inexpensive Pbs‐FET with high sensitivity and short response time was developed which consists of a PbS layer on a pH‐sensitive gate of a field effect transistor. The PbS‐layer was prepared with simple wet precipitations technique. The PbS‐FET has about the same selectivities for Pb2+ ‐and for Cu2+ ‐ions, but only slight sensitivity for Cd2+ ‐and Zn2+ ‐ions. The sensor was integrated in a FIA system. By variing the injection time the measuring range varied between 10−1‐10−6 and 10−2‐10−8 mol Pb2+/1. The PbS‐FET‐FIA system is suitable for monitoring of Pb2+ concentrations in drinking water.
UR - http://www.scopus.com/inward/record.url?scp=0029358481&partnerID=8YFLogxK
U2 - 10.1002/ceat.270180402
DO - 10.1002/ceat.270180402
M3 - Article
AN - SCOPUS:0029358481
VL - 18
SP - 225
EP - 228
JO - Chemical Engineering & Technology
JF - Chemical Engineering & Technology
SN - 0930-7516
IS - 4
ER -