Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
| Herausgeber/-innen | K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski |
| Seiten | 913-918 |
| Seitenumfang | 6 |
| Publikationsstatus | Veröffentlicht - 2003 |
| Extern publiziert | Ja |
| Veranstaltung | 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Dauer: 11 Mai 2003 → 18 Mai 2003 |
Publikationsreihe
| Name | Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Band | A |
Abstract
The extraordinary capacity of plasma-enhanced chemical-vapour-deposited (PECVD) silicon nitride (SiN) to passivate the surface of crystalline silicon wafers and, in the case of multicrystalline silicon, improve the bulk material by hydrogenation has attracted a great deal of research and development. This review summarizes the state of the art of surface passivation by PECVD SiN, together with the present understanding of the physical mechanisms that underlie it. The impact of SiN on ultimate solar cell performance is discussed and an optimization of SiN passivated n + emitters is presented. Finally, the experimental evidence of SiN-induced hydrogenation of mc-Si is discussed and areas for further work are suggested.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Allgemeiner Maschinenbau
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- RIS
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Hrsg. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. S. 913-918 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Band A).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Passivation of crystalline silicon using silicon nitride
AU - Cuevas, Andrés
AU - Kerr, Mark J.
AU - Schmidt, Jan
PY - 2003
Y1 - 2003
N2 - The extraordinary capacity of plasma-enhanced chemical-vapour-deposited (PECVD) silicon nitride (SiN) to passivate the surface of crystalline silicon wafers and, in the case of multicrystalline silicon, improve the bulk material by hydrogenation has attracted a great deal of research and development. This review summarizes the state of the art of surface passivation by PECVD SiN, together with the present understanding of the physical mechanisms that underlie it. The impact of SiN on ultimate solar cell performance is discussed and an optimization of SiN passivated n + emitters is presented. Finally, the experimental evidence of SiN-induced hydrogenation of mc-Si is discussed and areas for further work are suggested.
AB - The extraordinary capacity of plasma-enhanced chemical-vapour-deposited (PECVD) silicon nitride (SiN) to passivate the surface of crystalline silicon wafers and, in the case of multicrystalline silicon, improve the bulk material by hydrogenation has attracted a great deal of research and development. This review summarizes the state of the art of surface passivation by PECVD SiN, together with the present understanding of the physical mechanisms that underlie it. The impact of SiN on ultimate solar cell performance is discussed and an optimization of SiN passivated n + emitters is presented. Finally, the experimental evidence of SiN-induced hydrogenation of mc-Si is discussed and areas for further work are suggested.
UR - http://www.scopus.com/inward/record.url?scp=3142761245&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:3142761245
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 913
EP - 918
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - 3rd World Conference on Photovoltaic Energy Conversion
Y2 - 11 May 2003 through 18 May 2003
ER -