Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 199-204 |
| Seitenumfang | 6 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 92 |
| Publikationsstatus | Veröffentlicht - 1 Aug. 2016 |
| Veranstaltung | 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 - Chambery, Frankreich Dauer: 7 März 2016 → 9 März 2016 |
Abstract
We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2.
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in: Energy Procedia, Jahrgang 92, 01.08.2016, S. 199-204.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions
AU - Reiter, Sina
AU - Koper, Nico
AU - Reineke-Koch, Rolf
AU - Larionova, Yevgeniya
AU - Turcu, Mircea
AU - Krügener, Jan
AU - Tetzlaff, Dominic
AU - Wietler, Tobias
AU - Höhne, Uwe
AU - Kähler, Jan Dirk
AU - Brendel, Rolf
AU - Peibst, Robby
PY - 2016/8/1
Y1 - 2016/8/1
N2 - We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2.
AB - We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2.
KW - front junction
KW - optical properties
KW - Polycrystalline silicon
KW - ray tracing simulations
UR - http://www.scopus.com/inward/record.url?scp=85014492780&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2016.07.057
DO - 10.1016/j.egypro.2016.07.057
M3 - Conference article
AN - SCOPUS:85014492780
VL - 92
SP - 199
EP - 204
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016
Y2 - 7 March 2016 through 9 March 2016
ER -