Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001)

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • K. Pressel
  • M. Franz
  • D. Krüger
  • H. J. Osten
  • B. Garrido
  • J. R. Morante

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
  • Universitat de Barcelona (UB)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1757-1761
Seitenumfang5
FachzeitschriftJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Jahrgang16
Ausgabenummer3
PublikationsstatusVeröffentlicht - Mai 1998
Extern publiziertJa

Abstract

We have studied wet thermal oxidation between 700 and 1100°C of strained Si1-yCy (0≤y ≤0.02) layers grown by molecular beam epitaxy on Si(001) substrates. The oxidation kinetics and the refractive indices of the oxides grown on Si1-yCy were monitored by ellipsometry. They show no significant differences in comparison with oxides grown on silicon. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy reveal the appearance of carbon in the oxide. To find an appropriate temperature window for oxidation, we investigated the underlying Si1-yCy layers after oxidation by infrared absorption measurements. We observed a decrease of the substitutional carbon concentration for oxidation temperatures higher than 800°C. Thus, only a small temperature window for the growth of good thermal oxide on Si1-yCy layers is available. Infrared absorption measurements on the oxide vibrational modes reveal a small influence of the carbon concentration on the structural quality of the oxide.

ASJC Scopus Sachgebiete

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Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001). / Pressel, K.; Franz, M.; Krüger, D. et al.
in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Jahrgang 16, Nr. 3, 05.1998, S. 1757-1761.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Pressel, K, Franz, M, Krüger, D, Osten, HJ, Garrido, B & Morante, JR 1998, 'Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001)', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Jg. 16, Nr. 3, S. 1757-1761.
Pressel, K., Franz, M., Krüger, D., Osten, H. J., Garrido, B., & Morante, J. R. (1998). Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), 1757-1761.
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abstract = "We have studied wet thermal oxidation between 700 and 1100°C of strained Si1-yCy (0≤y ≤0.02) layers grown by molecular beam epitaxy on Si(001) substrates. The oxidation kinetics and the refractive indices of the oxides grown on Si1-yCy were monitored by ellipsometry. They show no significant differences in comparison with oxides grown on silicon. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy reveal the appearance of carbon in the oxide. To find an appropriate temperature window for oxidation, we investigated the underlying Si1-yCy layers after oxidation by infrared absorption measurements. We observed a decrease of the substitutional carbon concentration for oxidation temperatures higher than 800°C. Thus, only a small temperature window for the growth of good thermal oxide on Si1-yCy layers is available. Infrared absorption measurements on the oxide vibrational modes reveal a small influence of the carbon concentration on the structural quality of the oxide.",
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Download

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T1 - Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001)

AU - Pressel, K.

AU - Franz, M.

AU - Krüger, D.

AU - Osten, H. J.

AU - Garrido, B.

AU - Morante, J. R.

PY - 1998/5

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N2 - We have studied wet thermal oxidation between 700 and 1100°C of strained Si1-yCy (0≤y ≤0.02) layers grown by molecular beam epitaxy on Si(001) substrates. The oxidation kinetics and the refractive indices of the oxides grown on Si1-yCy were monitored by ellipsometry. They show no significant differences in comparison with oxides grown on silicon. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy reveal the appearance of carbon in the oxide. To find an appropriate temperature window for oxidation, we investigated the underlying Si1-yCy layers after oxidation by infrared absorption measurements. We observed a decrease of the substitutional carbon concentration for oxidation temperatures higher than 800°C. Thus, only a small temperature window for the growth of good thermal oxide on Si1-yCy layers is available. Infrared absorption measurements on the oxide vibrational modes reveal a small influence of the carbon concentration on the structural quality of the oxide.

AB - We have studied wet thermal oxidation between 700 and 1100°C of strained Si1-yCy (0≤y ≤0.02) layers grown by molecular beam epitaxy on Si(001) substrates. The oxidation kinetics and the refractive indices of the oxides grown on Si1-yCy were monitored by ellipsometry. They show no significant differences in comparison with oxides grown on silicon. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy reveal the appearance of carbon in the oxide. To find an appropriate temperature window for oxidation, we investigated the underlying Si1-yCy layers after oxidation by infrared absorption measurements. We observed a decrease of the substitutional carbon concentration for oxidation temperatures higher than 800°C. Thus, only a small temperature window for the growth of good thermal oxide on Si1-yCy layers is available. Infrared absorption measurements on the oxide vibrational modes reveal a small influence of the carbon concentration on the structural quality of the oxide.

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