Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 043062 |
| Seitenumfang | 1 |
| Fachzeitschrift | New Journal of Physics |
| Jahrgang | 17 |
| Publikationsstatus | Veröffentlicht - 29 Apr. 2015 |
Abstract
Weinvestigated the metallicity of Ag-√3 ordered atomic wires close to one monolayer (ML) coverage which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up to 0.6 MLon samples annealed at high temperatures where partial desorption occurs, we demonstrate that one-dimensionalmetallicity in the Ag-√3 × √3 R30° ordered atomicwires on the (111)miniterraces originates only from Ag atoms in excess of (local) monolayer coverage, which are adsorbed and localized at the highly stepped parts of the Si(557) surface. Thus these Ag atoms act as extrinsic dopants on the atomic scale, causing coverage dependent subband filling and increasing localization as a function of doping concentration. The second layer lattice gas as well as Ag islands on the (111) terraces turn out not to be relevant as dopants.Wesimulated the peculiar saturation behavior within a modified lattice gas model and give evidence that the preparation dependent saturation of doping is due to changes of average terrace size and step morphology induced by high temperature treatment.
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in: New Journal of Physics, Jahrgang 17, 043062, 29.04.2015.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Origin of metallicity in atomic Ag wires on Si(557)
AU - Krieg, U.
AU - Lichtenstein, Timo
AU - Brand, C.
AU - Tegenkamp, Christoph
AU - Pfnür, Herbert
PY - 2015/4/29
Y1 - 2015/4/29
N2 - Weinvestigated the metallicity of Ag-√3 ordered atomic wires close to one monolayer (ML) coverage which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up to 0.6 MLon samples annealed at high temperatures where partial desorption occurs, we demonstrate that one-dimensionalmetallicity in the Ag-√3 × √3 R30° ordered atomicwires on the (111)miniterraces originates only from Ag atoms in excess of (local) monolayer coverage, which are adsorbed and localized at the highly stepped parts of the Si(557) surface. Thus these Ag atoms act as extrinsic dopants on the atomic scale, causing coverage dependent subband filling and increasing localization as a function of doping concentration. The second layer lattice gas as well as Ag islands on the (111) terraces turn out not to be relevant as dopants.Wesimulated the peculiar saturation behavior within a modified lattice gas model and give evidence that the preparation dependent saturation of doping is due to changes of average terrace size and step morphology induced by high temperature treatment.
AB - Weinvestigated the metallicity of Ag-√3 ordered atomic wires close to one monolayer (ML) coverage which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up to 0.6 MLon samples annealed at high temperatures where partial desorption occurs, we demonstrate that one-dimensionalmetallicity in the Ag-√3 × √3 R30° ordered atomicwires on the (111)miniterraces originates only from Ag atoms in excess of (local) monolayer coverage, which are adsorbed and localized at the highly stepped parts of the Si(557) surface. Thus these Ag atoms act as extrinsic dopants on the atomic scale, causing coverage dependent subband filling and increasing localization as a function of doping concentration. The second layer lattice gas as well as Ag islands on the (111) terraces turn out not to be relevant as dopants.Wesimulated the peculiar saturation behavior within a modified lattice gas model and give evidence that the preparation dependent saturation of doping is due to changes of average terrace size and step morphology induced by high temperature treatment.
KW - High resolution electron loss spectroscopy
KW - Plasmons in one dimension
KW - Tunelling microscopy
KW - Wire doping
UR - http://www.scopus.com/inward/record.url?scp=84949143649&partnerID=8YFLogxK
U2 - 10.1088/1367-2630/17/4/043062
DO - 10.1088/1367-2630/17/4/043062
M3 - Article
AN - SCOPUS:84949143649
VL - 17
JO - New Journal of Physics
JF - New Journal of Physics
SN - 1367-2630
M1 - 043062
ER -