Optimizing the geometry of local aluminum-alloyed contacts to fully screen-printed silicon solar cells

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Jens Müller
  • Sebastian Gatz
  • Karsten Bothe
  • Rolf Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
  • SolarWorld Innovations GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Seiten2223-2228
Seitenumfang6
PublikationsstatusVeröffentlicht - 2012
Veranstaltung38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, USA / Vereinigte Staaten
Dauer: 3 Juni 20128 Juni 2012

Publikationsreihe

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Abstract

The performance optimization of solar cells comprising a locally contacted rear surface is a trade-off between rear surface recombination losses and resistive losses. Considering local aluminum (Al)-alloyed contacts formed by screen-printing an additional challenge arises from the impact of the processing conditions on the contact properties. The aim of this work is the development of a guideline to find the optimum contact geometry based on analytical models and experimentally verified parameterizations. Our study reveals equal performance of point and line rear contact layouts and an optimum metallization fraction of around 20 % on 2 Ωcm p-type Czochralski grown (Cz) Si.

ASJC Scopus Sachgebiete

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Optimizing the geometry of local aluminum-alloyed contacts to fully screen-printed silicon solar cells. / Müller, Jens; Gatz, Sebastian; Bothe, Karsten et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. S. 2223-2228 6318038 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Müller, J, Gatz, S, Bothe, K & Brendel, R 2012, Optimizing the geometry of local aluminum-alloyed contacts to fully screen-printed silicon solar cells. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6318038, Conference Record of the IEEE Photovoltaic Specialists Conference, S. 2223-2228, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, USA / Vereinigte Staaten, 3 Juni 2012. https://doi.org/10.1109/PVSC.2012.6318038
Müller, J., Gatz, S., Bothe, K., & Brendel, R. (2012). Optimizing the geometry of local aluminum-alloyed contacts to fully screen-printed silicon solar cells. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (S. 2223-2228). Artikel 6318038 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6318038
Müller J, Gatz S, Bothe K, Brendel R. Optimizing the geometry of local aluminum-alloyed contacts to fully screen-printed silicon solar cells. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. S. 2223-2228. 6318038. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2012.6318038
Müller, Jens ; Gatz, Sebastian ; Bothe, Karsten et al. / Optimizing the geometry of local aluminum-alloyed contacts to fully screen-printed silicon solar cells. Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. S. 2223-2228 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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abstract = "The performance optimization of solar cells comprising a locally contacted rear surface is a trade-off between rear surface recombination losses and resistive losses. Considering local aluminum (Al)-alloyed contacts formed by screen-printing an additional challenge arises from the impact of the processing conditions on the contact properties. The aim of this work is the development of a guideline to find the optimum contact geometry based on analytical models and experimentally verified parameterizations. Our study reveals equal performance of point and line rear contact layouts and an optimum metallization fraction of around 20 % on 2 Ωcm p-type Czochralski grown (Cz) Si.",
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