Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • Johann Christoph Stang
  • Thijs Franssen
  • Jan Haschke
  • Mathias Mews
  • Agnes Merkle
  • Robby Peibst
  • Bernd Rech
  • Lars Korte

Externe Organisationen

  • Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
  • Eidgenössische Technische Hochschule Lausanne (ETHL)
  • Institut für Solarenergieforschung GmbH (ISFH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer1700021
FachzeitschriftSolar RRL
Jahrgang1
Ausgabenummer3-4
Frühes Online-Datum15 März 2017
PublikationsstatusVeröffentlicht - 1 Apr. 2017
Extern publiziertJa

Abstract

We report on the design and manufacturing of interdigitated back contact cells based on the silicon heterojunction technology. The influence of geometry and overlap of the doped amorphous silicon layers forming the contact fingers on device performance have been investigated by simulation. Two contact formation concepts, with and without a TCO interlayer – an indium tin oxide/silver (ITO/Ag) stack, and a direct aluminum (Al) metallization – are experimentally evaluated. The former retains good passivation but leads to a too high contact resistivity, the latter shows the opposite behavior, but yields a slight benefit in terms of overall performance achieving more than 20% of efficiency. We show that in this case a contact system is formed whose properties can be tuned by annealing, enabling a trade-off between VOC and FF. Structure of the presented solar cell; a SiNX layer covers the front side, the rear side is passivated by overlapping layer stacks of intrinsic and doped amorphous silicon, the latter are contacted by aluminum.

ASJC Scopus Sachgebiete

Zitieren

Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells. / Stang, Johann Christoph; Franssen, Thijs; Haschke, Jan et al.
in: Solar RRL, Jahrgang 1, Nr. 3-4, 1700021, 01.04.2017.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Stang, JC, Franssen, T, Haschke, J, Mews, M, Merkle, A, Peibst, R, Rech, B & Korte, L 2017, 'Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells', Solar RRL, Jg. 1, Nr. 3-4, 1700021. https://doi.org/10.1002/solr.201700021
Stang, J. C., Franssen, T., Haschke, J., Mews, M., Merkle, A., Peibst, R., Rech, B., & Korte, L. (2017). Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells. Solar RRL, 1(3-4), Artikel 1700021. https://doi.org/10.1002/solr.201700021
Stang JC, Franssen T, Haschke J, Mews M, Merkle A, Peibst R et al. Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells. Solar RRL. 2017 Apr 1;1(3-4):1700021. Epub 2017 Mär 15. doi: 10.1002/solr.201700021
Stang, Johann Christoph ; Franssen, Thijs ; Haschke, Jan et al. / Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells. in: Solar RRL. 2017 ; Jahrgang 1, Nr. 3-4.
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abstract = "We report on the design and manufacturing of interdigitated back contact cells based on the silicon heterojunction technology. The influence of geometry and overlap of the doped amorphous silicon layers forming the contact fingers on device performance have been investigated by simulation. Two contact formation concepts, with and without a TCO interlayer – an indium tin oxide/silver (ITO/Ag) stack, and a direct aluminum (Al) metallization – are experimentally evaluated. The former retains good passivation but leads to a too high contact resistivity, the latter shows the opposite behavior, but yields a slight benefit in terms of overall performance achieving more than 20% of efficiency. We show that in this case a contact system is formed whose properties can be tuned by annealing, enabling a trade-off between VOC and FF. Structure of the presented solar cell; a SiNX layer covers the front side, the rear side is passivated by overlapping layer stacks of intrinsic and doped amorphous silicon, the latter are contacted by aluminum.",
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AU - Stang, Johann Christoph

AU - Franssen, Thijs

AU - Haschke, Jan

AU - Mews, Mathias

AU - Merkle, Agnes

AU - Peibst, Robby

AU - Rech, Bernd

AU - Korte, Lars

N1 - Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

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N2 - We report on the design and manufacturing of interdigitated back contact cells based on the silicon heterojunction technology. The influence of geometry and overlap of the doped amorphous silicon layers forming the contact fingers on device performance have been investigated by simulation. Two contact formation concepts, with and without a TCO interlayer – an indium tin oxide/silver (ITO/Ag) stack, and a direct aluminum (Al) metallization – are experimentally evaluated. The former retains good passivation but leads to a too high contact resistivity, the latter shows the opposite behavior, but yields a slight benefit in terms of overall performance achieving more than 20% of efficiency. We show that in this case a contact system is formed whose properties can be tuned by annealing, enabling a trade-off between VOC and FF. Structure of the presented solar cell; a SiNX layer covers the front side, the rear side is passivated by overlapping layer stacks of intrinsic and doped amorphous silicon, the latter are contacted by aluminum.

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