Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 199-204 |
| Seitenumfang | 6 |
| Fachzeitschrift | Materials Research Society Symposium - Proceedings |
| Jahrgang | 379 |
| Publikationsstatus | Veröffentlicht - 1995 |
| Extern publiziert | Ja |
| Veranstaltung | 1995 European Materials Research Society Meeting (E-MRS 1995 Spring Meeting) - San Francisco, USA / Vereinigte Staaten Dauer: 17 Apr. 1995 → 20 Apr. 1995 |
Abstract
The addition of carbon atoms into Si or SiGe layers on Si opens the possibility for strain and bandstructure engineering. In this paper we will investigate the influence of carbon on the optical transitions of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001) substrate using solid source MBE including also full strain-compensation. The layers were investigated by spectroscopic ellipsometry and electroreflectance spectroscopy for y ≤ 1.2%. From the numerical derivatives of the measured dielectric constants, we determined the critical points energies E0′, E1 and E2 as a function of the carbon content y. This shift was analyzed by measuring and fitting electroreflectance spectra at 80K and ellipsometry data at room temperature, resulting in a week and nearly linear dependence on the carbon content at all transitions. These dependencies indicate that the interpretation of optical spectra of C-containing alloys can not be performed straightforward by simple interpolating between the appropriate band structures of silicon, germanium and carbon. An analysis based on only strain-induced contributions also does not describe the experimental results correctly. For a description of the observed energy shifts for pseudomorphic Si1-x-yGexCy we have to consider at least strain-induced effects and effects due to alloying.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
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in: Materials Research Society Symposium - Proceedings, Jahrgang 379, 1995, S. 199-204.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Optical transitions in strained Si1-yCy and Si1-x-yGexCy layers on Si(001)
AU - Osten, H. J.
AU - Kissinger, W.
AU - Weidner, M.
AU - Eichler, M.
PY - 1995
Y1 - 1995
N2 - The addition of carbon atoms into Si or SiGe layers on Si opens the possibility for strain and bandstructure engineering. In this paper we will investigate the influence of carbon on the optical transitions of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001) substrate using solid source MBE including also full strain-compensation. The layers were investigated by spectroscopic ellipsometry and electroreflectance spectroscopy for y ≤ 1.2%. From the numerical derivatives of the measured dielectric constants, we determined the critical points energies E0′, E1 and E2 as a function of the carbon content y. This shift was analyzed by measuring and fitting electroreflectance spectra at 80K and ellipsometry data at room temperature, resulting in a week and nearly linear dependence on the carbon content at all transitions. These dependencies indicate that the interpretation of optical spectra of C-containing alloys can not be performed straightforward by simple interpolating between the appropriate band structures of silicon, germanium and carbon. An analysis based on only strain-induced contributions also does not describe the experimental results correctly. For a description of the observed energy shifts for pseudomorphic Si1-x-yGexCy we have to consider at least strain-induced effects and effects due to alloying.
AB - The addition of carbon atoms into Si or SiGe layers on Si opens the possibility for strain and bandstructure engineering. In this paper we will investigate the influence of carbon on the optical transitions of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001) substrate using solid source MBE including also full strain-compensation. The layers were investigated by spectroscopic ellipsometry and electroreflectance spectroscopy for y ≤ 1.2%. From the numerical derivatives of the measured dielectric constants, we determined the critical points energies E0′, E1 and E2 as a function of the carbon content y. This shift was analyzed by measuring and fitting electroreflectance spectra at 80K and ellipsometry data at room temperature, resulting in a week and nearly linear dependence on the carbon content at all transitions. These dependencies indicate that the interpretation of optical spectra of C-containing alloys can not be performed straightforward by simple interpolating between the appropriate band structures of silicon, germanium and carbon. An analysis based on only strain-induced contributions also does not describe the experimental results correctly. For a description of the observed energy shifts for pseudomorphic Si1-x-yGexCy we have to consider at least strain-induced effects and effects due to alloying.
UR - http://www.scopus.com/inward/record.url?scp=0029544432&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0029544432
VL - 379
SP - 199
EP - 204
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
T2 - 1995 European Materials Research Society Meeting (E-MRS 1995 Spring Meeting)
Y2 - 17 April 1995 through 20 April 1995
ER -