Details
Originalsprache | Englisch |
---|---|
Publikationsstatus | Veröffentlicht - 2014 |
Veranstaltung | 12th International Conference on Fiber Optics and Photonics, Photonics 2014 - Kharagpur, Indien Dauer: 13 Dez. 2014 → 16 Dez. 2014 |
Konferenz
Konferenz | 12th International Conference on Fiber Optics and Photonics, Photonics 2014 |
---|---|
Land/Gebiet | Indien |
Ort | Kharagpur |
Zeitraum | 13 Dez. 2014 → 16 Dez. 2014 |
Abstract
Compressively strained, ∼2 nm thick Ge film has been grown on relaxed Si0.5Ge0.5 virtual substrate using molecular beam epitaxy. Grown film exhibits no-phonon assisted direct optical transition at around 1520 nm upto 300 K.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
2014. Beitrag in 12th International Conference on Fiber Optics and Photonics, Photonics 2014, Kharagpur, Indien.
Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review
}
TY - CONF
T1 - Optical emission characteristics of compressively strained Ge films
AU - Katiyar, Ajit K.
AU - Grimm, Andreas
AU - Rakesh, Aluguri
AU - Bar, R.
AU - Wietler, Tobias
AU - Osten, H. Joerg
AU - Ray, Samit K.
N1 - Publisher Copyright: © OSA 2014.
PY - 2014
Y1 - 2014
N2 - Compressively strained, ∼2 nm thick Ge film has been grown on relaxed Si0.5Ge0.5 virtual substrate using molecular beam epitaxy. Grown film exhibits no-phonon assisted direct optical transition at around 1520 nm upto 300 K.
AB - Compressively strained, ∼2 nm thick Ge film has been grown on relaxed Si0.5Ge0.5 virtual substrate using molecular beam epitaxy. Grown film exhibits no-phonon assisted direct optical transition at around 1520 nm upto 300 K.
UR - http://www.scopus.com/inward/record.url?scp=84983171173&partnerID=8YFLogxK
U2 - 10.1364/PHOTONICS.2014.S5A.65
DO - 10.1364/PHOTONICS.2014.S5A.65
M3 - Paper
T2 - 12th International Conference on Fiber Optics and Photonics, Photonics 2014
Y2 - 13 December 2014 through 16 December 2014
ER -