On the data analysis of light-biased photoconductance decay measurements

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  • Institut für Solarenergieforschung GmbH (ISFH)
  • Max-Planck-Institut für Festkörperforschung
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Details

OriginalspracheEnglisch
Seiten (von - bis)1491-1496
Seitenumfang6
FachzeitschriftJournal of applied physics
Jahrgang79
Ausgabenummer3
PublikationsstatusVeröffentlicht - 1 Feb. 1996
Extern publiziertJa

Abstract

The use of bias light is common practice today in photoconductance decay (PCD) measurements to analyze semiconductor samples with injection-level dependent recombination parameters (i.e., surface recombination velocity and/or bulk lifetime). Recently, it has been shown on theoretical grounds that the previously reported recombination parameters from light-biased PCD experiments are not the actual properties of the investigated sample, but so-called differential recombination parameters [R. Brendel, Appl. Phys. A 60, 523 (1995)]. In the present article the theory relevant to light-biased PCD measurements is discussed in detail and subsequently applied to monocrystalline silicon wafers with nitride and oxide passivated surfaces in order to verify the deviations between the differential and actual surface recombination velocities. Special emphasis is paid to the experimental fact that the injection level cannot be reduced below a minimum value due to signal-to-noise problems.

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On the data analysis of light-biased photoconductance decay measurements. / Aberle, Armin G.; Schmidt, Jan; Brendel, Rolf.
in: Journal of applied physics, Jahrgang 79, Nr. 3, 01.02.1996, S. 1491-1496.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Aberle AG, Schmidt J, Brendel R. On the data analysis of light-biased photoconductance decay measurements. Journal of applied physics. 1996 Feb 1;79(3):1491-1496. doi: 10.1063/1.360990
Aberle, Armin G. ; Schmidt, Jan ; Brendel, Rolf. / On the data analysis of light-biased photoconductance decay measurements. in: Journal of applied physics. 1996 ; Jahrgang 79, Nr. 3. S. 1491-1496.
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