Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Qing Qing Sun
  • Apurba Laha
  • Shi Jin Ding
  • David Wei Zhang
  • H. Jörg Osten
  • A. Fissel

Organisationseinheiten

Externe Organisationen

  • Fudan University
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Details

OriginalspracheEnglisch
Aufsatznummer083509
FachzeitschriftApplied physics letters
Jahrgang93
Ausgabenummer8
PublikationsstatusVeröffentlicht - 27 Aug. 2008

Abstract

Single crystalline Nd2 O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100 °C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17× 1011 eV-1 cm-2 and 3.75× 1012 cm-2, respectively. The interface trap density is then further confirmed by the conductance method.

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Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method. / Sun, Qing Qing; Laha, Apurba; Ding, Shi Jin et al.
in: Applied physics letters, Jahrgang 93, Nr. 8, 083509, 27.08.2008.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Sun, Q. Q., Laha, A., Ding, S. J., Zhang, D. W., Osten, H. J., & Fissel, A. (2008). Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method. Applied physics letters, 93(8), Artikel 083509. https://doi.org/10.1063/1.2976325
Sun QQ, Laha A, Ding SJ, Zhang DW, Osten HJ, Fissel A. Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method. Applied physics letters. 2008 Aug 27;93(8):083509. doi: 10.1063/1.2976325
Sun, Qing Qing ; Laha, Apurba ; Ding, Shi Jin et al. / Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method. in: Applied physics letters. 2008 ; Jahrgang 93, Nr. 8.
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title = "Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method",
abstract = "Single crystalline Nd2 O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100 °C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17× 1011 eV-1 cm-2 and 3.75× 1012 cm-2, respectively. The interface trap density is then further confirmed by the conductance method.",
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T1 - Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method

AU - Sun, Qing Qing

AU - Laha, Apurba

AU - Ding, Shi Jin

AU - Zhang, David Wei

AU - Osten, H. Jörg

AU - Fissel, A.

N1 - Funding Information: This work is supported by the Science and Technology Committee of Shanghai (No. 071111007), National Natural Science Foundation of China (60628403 and 60776017), and SRFDP (20060246032). The authors would also like to acknowledge CSC-DAAD PPP project for assigning a scholarship.

PY - 2008/8/27

Y1 - 2008/8/27

N2 - Single crystalline Nd2 O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100 °C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17× 1011 eV-1 cm-2 and 3.75× 1012 cm-2, respectively. The interface trap density is then further confirmed by the conductance method.

AB - Single crystalline Nd2 O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100 °C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17× 1011 eV-1 cm-2 and 3.75× 1012 cm-2, respectively. The interface trap density is then further confirmed by the conductance method.

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