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Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Autorschaft

  • A. Rudevičs
  • A. Muižnieks
  • G. Ratnieks
  • A. Mühlbauer

Organisationseinheiten

Externe Organisationen

  • University of Latvia
  • Siltronic AG

Details

OriginalspracheEnglisch
Seiten (von - bis)54-59
Seitenumfang6
FachzeitschriftJournal of crystal growth
Jahrgang266
Ausgabenummer1-3
Frühes Online-Datum8 Apr. 2004
PublikationsstatusVeröffentlicht - 15 Mai 2004
VeranstaltungFourth International Workshop on Modeling - Kyushu, Japan
Dauer: 4 Nov. 20037 Nov. 2003

Abstract

The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for reducing crystal diameter during growth process are presented.

ASJC Scopus Sachgebiete

Zitieren

Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth. / Rudevičs, A.; Muižnieks, A.; Ratnieks, G. et al.
in: Journal of crystal growth, Jahrgang 266, Nr. 1-3, 15.05.2004, S. 54-59.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Rudevičs A, Muižnieks A, Ratnieks G, Mühlbauer A, Wetzel T. Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth. Journal of crystal growth. 2004 Mai 15;266(1-3):54-59. Epub 2004 Apr 8. doi: 10.1016/j.jcrysgro.2004.02.029
Rudevičs, A. ; Muižnieks, A. ; Ratnieks, G. et al. / Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth. in: Journal of crystal growth. 2004 ; Jahrgang 266, Nr. 1-3. S. 54-59.
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AU - Rudevičs, A.

AU - Muižnieks, A.

AU - Ratnieks, G.

AU - Mühlbauer, A.

AU - Wetzel, Th

N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

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