Details
Originalsprache | Englisch |
---|---|
Titel des Sammelwerks | Crystal growth 1998 |
Untertitel | proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998 |
Erscheinungsort | Amsterdam |
Herausgeber (Verlag) | North-Holland Publ Co |
Publikationsstatus | Veröffentlicht - 1998 |
Veranstaltung | 12th International Conference on Crystal Growth (ICCG) - Jerusalem Dauer: 26 Juli 1998 → 31 Juli 1998 |
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Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. / Mühlbauer, Alfred; Muiznieks, Andris; Raming, Georg et al.
Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998. Amsterdam: North-Holland Publ Co, 1998.
Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998. Amsterdam: North-Holland Publ Co, 1998.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung
Mühlbauer, A, Muiznieks, A, Raming, G, Riemann, H & Lüdge, A 1998, Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. in Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998. North-Holland Publ Co, Amsterdam, 12th International Conference on Crystal Growth (ICCG), Jerusalem, 26 Juli 1998.
Mühlbauer, A., Muiznieks, A., Raming, G., Riemann, H., & Lüdge, A. (1998). Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. In Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998 North-Holland Publ Co.
Mühlbauer A, Muiznieks A, Raming G, Riemann H, Lüdge A. Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. in Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998. Amsterdam: North-Holland Publ Co. 1998
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@inproceedings{3681ed690e5e4af38a6c439933ee96c3,
title = "Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth",
author = "Alfred M{\"u}hlbauer and Andris Muiznieks and Georg Raming and H. Riemann and A. L{\"u}dge",
year = "1998",
language = "English",
booktitle = "Crystal growth 1998",
publisher = "North-Holland Publ Co",
address = "Netherlands",
note = "12th International Conference on Crystal Growth (ICCG) ; Conference date: 26-07-1998 Through 31-07-1998",
}
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TY - GEN
T1 - Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth
AU - Mühlbauer, Alfred
AU - Muiznieks, Andris
AU - Raming, Georg
AU - Riemann, H.
AU - Lüdge, A.
PY - 1998
Y1 - 1998
M3 - Conference contribution
BT - Crystal growth 1998
PB - North-Holland Publ Co
CY - Amsterdam
T2 - 12th International Conference on Crystal Growth (ICCG)
Y2 - 26 July 1998 through 31 July 1998
ER -