Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschung

Autoren

  • Alfred Mühlbauer
  • Andris Muiznieks
  • Georg Raming
  • H. Riemann
  • A. Lüdge

Organisationseinheiten

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Details

OriginalspracheEnglisch
Titel des SammelwerksCrystal growth 1998
Untertitelproceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998
ErscheinungsortAmsterdam
Herausgeber (Verlag)North-Holland Publ Co
PublikationsstatusVeröffentlicht - 1998
Veranstaltung12th International Conference on Crystal Growth (ICCG) - Jerusalem
Dauer: 26 Juli 199831 Juli 1998

Zitieren

Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. / Mühlbauer, Alfred; Muiznieks, Andris; Raming, Georg et al.
Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998. Amsterdam: North-Holland Publ Co, 1998.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschung

Mühlbauer, A, Muiznieks, A, Raming, G, Riemann, H & Lüdge, A 1998, Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. in Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998. North-Holland Publ Co, Amsterdam, 12th International Conference on Crystal Growth (ICCG), Jerusalem, 26 Juli 1998.
Mühlbauer, A., Muiznieks, A., Raming, G., Riemann, H., & Lüdge, A. (1998). Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. In Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998 North-Holland Publ Co.
Mühlbauer A, Muiznieks A, Raming G, Riemann H, Lüdge A. Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. in Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998. Amsterdam: North-Holland Publ Co. 1998
Mühlbauer, Alfred ; Muiznieks, Andris ; Raming, Georg et al. / Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth. Crystal growth 1998: proceedings of the 12th International Conference on Crystal Growth and the 10th International Conference on Vapor Growth and Epitaxy, Jerusalem, Israel, July 26 - 31, 1998. Amsterdam : North-Holland Publ Co, 1998.
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title = "Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth",
author = "Alfred M{\"u}hlbauer and Andris Muiznieks and Georg Raming and H. Riemann and A. L{\"u}dge",
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note = "12th International Conference on Crystal Growth (ICCG) ; Conference date: 26-07-1998 Through 31-07-1998",

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T1 - Numerical modelling of the microscopic inhomogenities during FZ-silicon-growth

AU - Mühlbauer, Alfred

AU - Muiznieks, Andris

AU - Raming, Georg

AU - Riemann, H.

AU - Lüdge, A.

PY - 1998

Y1 - 1998

M3 - Conference contribution

BT - Crystal growth 1998

PB - North-Holland Publ Co

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