Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 107-113 |
| Seitenumfang | 7 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 198-199 |
| Ausgabenummer | PART I |
| Publikationsstatus | Veröffentlicht - März 1999 |
Abstract
Transient axisymmetric numerical calculations of the hydrodynamic, temperature and solute concentration fields have been performed by means of FEM for the needle-eye FZ Silicon single-crystal growth process (diameter 4″) to analyse the microscopic inhomogeneities. The rotation of the single crystal and feed rod, the buoyancy, Marangoni and electromagnetic (EM) forces in the melt are taken into account. Axisymmetric velocity oscillations caused by hydrodynamic instabilities are considered and calculated numerically. Two mechanisms of the oscillating dopant incorporation in the crystal are investigated: (1) the direct influence of the transient velocity field on the concentration field due to convective solute transport and (2) the influence of the oscillating temperature field on the local growth rate and as a consequence on the oscillating dopant segregation process at the growth interface. It is shown that for the considered experimental set-up the first mechanism dominates for the microscopic inhomogeneities. The calculated oscillations of the dopant concentration in the grown crystal (striations) are compared to spreading resistance measurements.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 198-199, Nr. PART I, 03.1999, S. 107-113.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Numerical modelling of the microscopic inhomogeneities during FZ silicon growth
AU - Mühlbauer, A.
AU - Muiznieks, A.
AU - Raming, G.
AU - Riemann, H.
AU - Lüdge, A.
N1 - Funding Information: The authors are grateful for the support received from Wacker-Siltronic AG, Burghausen, Germany. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1999/3
Y1 - 1999/3
N2 - Transient axisymmetric numerical calculations of the hydrodynamic, temperature and solute concentration fields have been performed by means of FEM for the needle-eye FZ Silicon single-crystal growth process (diameter 4″) to analyse the microscopic inhomogeneities. The rotation of the single crystal and feed rod, the buoyancy, Marangoni and electromagnetic (EM) forces in the melt are taken into account. Axisymmetric velocity oscillations caused by hydrodynamic instabilities are considered and calculated numerically. Two mechanisms of the oscillating dopant incorporation in the crystal are investigated: (1) the direct influence of the transient velocity field on the concentration field due to convective solute transport and (2) the influence of the oscillating temperature field on the local growth rate and as a consequence on the oscillating dopant segregation process at the growth interface. It is shown that for the considered experimental set-up the first mechanism dominates for the microscopic inhomogeneities. The calculated oscillations of the dopant concentration in the grown crystal (striations) are compared to spreading resistance measurements.
AB - Transient axisymmetric numerical calculations of the hydrodynamic, temperature and solute concentration fields have been performed by means of FEM for the needle-eye FZ Silicon single-crystal growth process (diameter 4″) to analyse the microscopic inhomogeneities. The rotation of the single crystal and feed rod, the buoyancy, Marangoni and electromagnetic (EM) forces in the melt are taken into account. Axisymmetric velocity oscillations caused by hydrodynamic instabilities are considered and calculated numerically. Two mechanisms of the oscillating dopant incorporation in the crystal are investigated: (1) the direct influence of the transient velocity field on the concentration field due to convective solute transport and (2) the influence of the oscillating temperature field on the local growth rate and as a consequence on the oscillating dopant segregation process at the growth interface. It is shown that for the considered experimental set-up the first mechanism dominates for the microscopic inhomogeneities. The calculated oscillations of the dopant concentration in the grown crystal (striations) are compared to spreading resistance measurements.
KW - FZ silicon
KW - Microscopic inhomogeneities
KW - Numerical modelling
KW - Transient velocity
UR - http://www.scopus.com/inward/record.url?scp=0033514658&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01158-0
DO - 10.1016/S0022-0248(98)01158-0
M3 - Article
AN - SCOPUS:0033514658
VL - 198-199
SP - 107
EP - 113
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - PART I
ER -