Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings of the International Colloquium Modelling of Material Processing |
| Untertitel | Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover |
| Erscheinungsort | Riga |
| Seiten | 24-29 |
| Publikationsstatus | Veröffentlicht - 1999 |
| Veranstaltung | International Scientific Colloquium Modelling of Material Processing - Riga Dauer: 28 Mai 1999 → 29 Mai 1999 |
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Numerical modelling of the influence of different types of magnetic fields on fluid motion and resistivity profiles during FZ silicon crystal growth. / Raming, Georg; Muiznieks, Andris; Mühlbauer, Alfred.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. S. 24-29.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. S. 24-29.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung
Raming, G, Muiznieks, A & Mühlbauer, A 1999, Numerical modelling of the influence of different types of magnetic fields on fluid motion and resistivity profiles during FZ silicon crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, S. 24-29, International Scientific Colloquium Modelling of Material Processing, Riga, 28 Mai 1999.
Raming, G., Muiznieks, A., & Mühlbauer, A. (1999). Numerical modelling of the influence of different types of magnetic fields on fluid motion and resistivity profiles during FZ silicon crystal growth. In Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover (S. 24-29).
Raming G, Muiznieks A, Mühlbauer A. Numerical modelling of the influence of different types of magnetic fields on fluid motion and resistivity profiles during FZ silicon crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga. 1999. S. 24-29
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@inproceedings{09a4e0dee570411f9dd47a1cd406175e,
title = "Numerical modelling of the influence of different types of magnetic fields on fluid motion and resistivity profiles during FZ silicon crystal growth",
author = "Georg Raming and Andris Muiznieks and Alfred M{\"u}hlbauer",
year = "1999",
language = "English",
isbn = "9984-572-38-2",
pages = "24--29",
booktitle = "Proceedings of the International Colloquium Modelling of Material Processing",
note = "International Scientific Colloquium Modelling of Material Processing ; Conference date: 28-05-1999 Through 29-05-1999",
}
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TY - GEN
T1 - Numerical modelling of the influence of different types of magnetic fields on fluid motion and resistivity profiles during FZ silicon crystal growth
AU - Raming, Georg
AU - Muiznieks, Andris
AU - Mühlbauer, Alfred
PY - 1999
Y1 - 1999
M3 - Conference contribution
SN - 9984-572-38-2
SP - 24
EP - 29
BT - Proceedings of the International Colloquium Modelling of Material Processing
CY - Riga
T2 - International Scientific Colloquium Modelling of Material Processing
Y2 - 28 May 1999 through 29 May 1999
ER -