Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings of the International Colloquium Modelling of Material Processing |
| Untertitel | Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover |
| Erscheinungsort | Riga |
| Seiten | 42-47 |
| Publikationsstatus | Veröffentlicht - 1999 |
| Veranstaltung | International Scientific Colloquium Modelling of Material Processing - Riga Dauer: 28 Mai 1999 → 29 Mai 1999 |
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Numerical modelling of melt flow during Czochralski Silicon crystal growth. / Virbulis, J.; Wetzel, T.; Muiznieks, Andris et al.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. S. 42-47.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. S. 42-47.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung
Virbulis, J, Wetzel, T, Muiznieks, A, Raming, G, Rexer, B, Dornberger, E, von Ammon, W & Mühlbauer, A 1999, Numerical modelling of melt flow during Czochralski Silicon crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, S. 42-47, International Scientific Colloquium Modelling of Material Processing, Riga, 28 Mai 1999.
Virbulis, J., Wetzel, T., Muiznieks, A., Raming, G., Rexer, B., Dornberger, E., von Ammon, W., & Mühlbauer, A. (1999). Numerical modelling of melt flow during Czochralski Silicon crystal growth. In Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover (S. 42-47).
Virbulis J, Wetzel T, Muiznieks A, Raming G, Rexer B, Dornberger E et al. Numerical modelling of melt flow during Czochralski Silicon crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga. 1999. S. 42-47
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title = "Numerical modelling of melt flow during Czochralski Silicon crystal growth",
author = "J. Virbulis and T. Wetzel and Andris Muiznieks and Georg Raming and B. Rexer and E. Dornberger and {von Ammon}, W. and Alfred M{\"u}hlbauer",
year = "1999",
language = "English",
isbn = "9984-572-38-2",
pages = "42--47",
booktitle = "Proceedings of the International Colloquium Modelling of Material Processing",
note = "International Scientific Colloquium Modelling of Material Processing ; Conference date: 28-05-1999 Through 29-05-1999",
}
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TY - GEN
T1 - Numerical modelling of melt flow during Czochralski Silicon crystal growth
AU - Virbulis, J.
AU - Wetzel, T.
AU - Muiznieks, Andris
AU - Raming, Georg
AU - Rexer, B.
AU - Dornberger, E.
AU - von Ammon, W.
AU - Mühlbauer, Alfred
PY - 1999
Y1 - 1999
M3 - Conference contribution
SN - 9984-572-38-2
SP - 42
EP - 47
BT - Proceedings of the International Colloquium Modelling of Material Processing
CY - Riga
T2 - International Scientific Colloquium Modelling of Material Processing
Y2 - 28 May 1999 through 29 May 1999
ER -