Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Autoren

  • Hendrik Holst
  • Rolf Brendel
  • Pietro P. Altermatt
  • Matthias Winter
  • Malte R. Vogt

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Seiten (von - bis)215-224
Seitenumfang10
FachzeitschriftEnergy Procedia
Jahrgang77
Frühes Online-Datum28 Aug. 2015
PublikationsstatusVeröffentlicht - Aug. 2015
Veranstaltung5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Deutschland
Dauer: 25 März 201527 März 2015

Abstract

Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm to calculate heat sources. Subsequently, finite element method (FEM) simulations are used to solve the semiconductor equations coupled with the thermal conduction, thermal convection, and thermal radiation equations. The implemented model is validated with measurements from an outdoor test over the period of an entire year. Our ray tracing analysis of different solar modules under the AM.15G spectrum shows that, for a standard module about 18.9% of the sun's intensity becomes parasitically absorbed. A loss analysis shows that the biggest parasitic heat source is the cell's full-area rear side metallization. We hence propose the use of a SiNx layer as rear side mirror to reduce the parasitic absorption to 11.7%. This change can lead to a 3.2 °C lower module operating temperature, which results in an about 5 W higher electrical power output when considering a typical 260 W module.

ASJC Scopus Sachgebiete

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Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations. / Holst, Hendrik; Brendel, Rolf; Altermatt, Pietro P. et al.
in: Energy Procedia, Jahrgang 77, 08.2015, S. 215-224.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Holst H, Brendel R, Altermatt PP, Winter M, Vogt MR. Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations. Energy Procedia. 2015 Aug;77:215-224. Epub 2015 Aug 28. doi: 10.1016/j.egypro.2015.07.030, 10.15488/783
Holst, Hendrik ; Brendel, Rolf ; Altermatt, Pietro P. et al. / Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations. in: Energy Procedia. 2015 ; Jahrgang 77. S. 215-224.
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abstract = "Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm to calculate heat sources. Subsequently, finite element method (FEM) simulations are used to solve the semiconductor equations coupled with the thermal conduction, thermal convection, and thermal radiation equations. The implemented model is validated with measurements from an outdoor test over the period of an entire year. Our ray tracing analysis of different solar modules under the AM.15G spectrum shows that, for a standard module about 18.9% of the sun's intensity becomes parasitically absorbed. A loss analysis shows that the biggest parasitic heat source is the cell's full-area rear side metallization. We hence propose the use of a SiNx layer as rear side mirror to reduce the parasitic absorption to 11.7%. This change can lead to a 3.2 °C lower module operating temperature, which results in an about 5 W higher electrical power output when considering a typical 260 W module.",
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T1 - Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations

AU - Holst, Hendrik

AU - Brendel, Rolf

AU - Altermatt, Pietro P.

AU - Winter, Matthias

AU - Vogt, Malte R.

N1 - Publisher Copyright: © 2015 The Authors.

PY - 2015/8

Y1 - 2015/8

N2 - Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm to calculate heat sources. Subsequently, finite element method (FEM) simulations are used to solve the semiconductor equations coupled with the thermal conduction, thermal convection, and thermal radiation equations. The implemented model is validated with measurements from an outdoor test over the period of an entire year. Our ray tracing analysis of different solar modules under the AM.15G spectrum shows that, for a standard module about 18.9% of the sun's intensity becomes parasitically absorbed. A loss analysis shows that the biggest parasitic heat source is the cell's full-area rear side metallization. We hence propose the use of a SiNx layer as rear side mirror to reduce the parasitic absorption to 11.7%. This change can lead to a 3.2 °C lower module operating temperature, which results in an about 5 W higher electrical power output when considering a typical 260 W module.

AB - Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm to calculate heat sources. Subsequently, finite element method (FEM) simulations are used to solve the semiconductor equations coupled with the thermal conduction, thermal convection, and thermal radiation equations. The implemented model is validated with measurements from an outdoor test over the period of an entire year. Our ray tracing analysis of different solar modules under the AM.15G spectrum shows that, for a standard module about 18.9% of the sun's intensity becomes parasitically absorbed. A loss analysis shows that the biggest parasitic heat source is the cell's full-area rear side metallization. We hence propose the use of a SiNx layer as rear side mirror to reduce the parasitic absorption to 11.7%. This change can lead to a 3.2 °C lower module operating temperature, which results in an about 5 W higher electrical power output when considering a typical 260 W module.

KW - dielectric rear side mirror

KW - Ray tracing

KW - simlation

KW - solar module temperature;field measurements

KW - thermal solar module behaviour

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