Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 108-117 |
| Seitenumfang | 10 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 230 |
| Ausgabenummer | 1-2 |
| Frühes Online-Datum | 10 Juli 2001 |
| Publikationsstatus | Veröffentlicht - Aug. 2001 |
Abstract
The floating-zone-process with needle-eye inductor is a complex process with many coupled parameters that have nonlinear influence on the process stability and resistivity distribution in the silicon single crystal. To fulfill the requirements of semiconductor industry for tighter specification of resistivity distribution, additional means like magnetic fields can be used to reach a more homogeneous resistivity distribution without disturbing process stability. The current paper analyses the influence of static and alternating fields on the fluid motion and macroscopic and microscopic resistivity profile by means of numerical calculations. It is found that with a lower frequency of the HF-inductor current and with an additional AC-field the radial resistivity profile can be made more homogeneous. Rotating magnetic fields give only a slightly more homogeneous resistivity profile. DC-fields do not change the radial resistivity distribution qualitatively, but suppress all flow oscillations and therefore axial microscopic resistivity variations.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 230, Nr. 1-2, 08.2001, S. 108-117.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals
AU - Raming, G.
AU - Muižnieks, A.
AU - Mühlbauer, A.
N1 - Copyright: Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2001/8
Y1 - 2001/8
N2 - The floating-zone-process with needle-eye inductor is a complex process with many coupled parameters that have nonlinear influence on the process stability and resistivity distribution in the silicon single crystal. To fulfill the requirements of semiconductor industry for tighter specification of resistivity distribution, additional means like magnetic fields can be used to reach a more homogeneous resistivity distribution without disturbing process stability. The current paper analyses the influence of static and alternating fields on the fluid motion and macroscopic and microscopic resistivity profile by means of numerical calculations. It is found that with a lower frequency of the HF-inductor current and with an additional AC-field the radial resistivity profile can be made more homogeneous. Rotating magnetic fields give only a slightly more homogeneous resistivity profile. DC-fields do not change the radial resistivity distribution qualitatively, but suppress all flow oscillations and therefore axial microscopic resistivity variations.
AB - The floating-zone-process with needle-eye inductor is a complex process with many coupled parameters that have nonlinear influence on the process stability and resistivity distribution in the silicon single crystal. To fulfill the requirements of semiconductor industry for tighter specification of resistivity distribution, additional means like magnetic fields can be used to reach a more homogeneous resistivity distribution without disturbing process stability. The current paper analyses the influence of static and alternating fields on the fluid motion and macroscopic and microscopic resistivity profile by means of numerical calculations. It is found that with a lower frequency of the HF-inductor current and with an additional AC-field the radial resistivity profile can be made more homogeneous. Rotating magnetic fields give only a slightly more homogeneous resistivity profile. DC-fields do not change the radial resistivity distribution qualitatively, but suppress all flow oscillations and therefore axial microscopic resistivity variations.
KW - A1. Computer simulation
KW - A1. Convection
KW - A1. Magnetic fields
KW - A2. Floating zone technique
KW - B2. Semiconducting silicon
UR - http://www.scopus.com/inward/record.url?scp=0035426381&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01323-9
DO - 10.1016/S0022-0248(01)01323-9
M3 - Conference article
AN - SCOPUS:0035426381
VL - 230
SP - 108
EP - 117
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-2
ER -