Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 157-167 |
| Seitenumfang | 11 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 262 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 15 Feb. 2004 |
Abstract
The paper presents an investigation of the turbulent flow features in a CZ crystal growth system with a horizontal DC magnetic field by 3D mathematical modelling. A laboratory model with InGaSn eutectic and with a 20″ crucible is considered. The model corresponds to an industrial silicon crystal growth system. A 3D model for the scalar potential induced in the melt by a horizontal DC magnetic field is implemented in the HD program package CFD-ACE(V2003) together with the corresponding boundary conditions. For 3D HD calculations, moderate grids and the RNG k-ε turbulence model are used. The features of the flow and the temperature field structure in different cases (only thermogravitational convection, flow with rotation influence) under the magnetic field are investigated. It is shown that the flow and temperature distributions in all cases are strongly influenced by the magnetic field of 0.08-0.16 T. The crucible and crystal rotation together with the horizontal DC field creates flow and temperature distribution with a very complicated 3D structure.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 262, Nr. 1-4, 15.02.2004, S. 157-167.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Numerical 3D modelling of turbulent melt flow in large CZ system with horizontal DC magnetic field - I
T2 - Flow structure analysis
AU - Krauze, A.
AU - Muižnieks, A.
AU - Mühlbauer, A.
AU - Wetzel, Th
AU - Ammon, W. V.
N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/2/15
Y1 - 2004/2/15
N2 - The paper presents an investigation of the turbulent flow features in a CZ crystal growth system with a horizontal DC magnetic field by 3D mathematical modelling. A laboratory model with InGaSn eutectic and with a 20″ crucible is considered. The model corresponds to an industrial silicon crystal growth system. A 3D model for the scalar potential induced in the melt by a horizontal DC magnetic field is implemented in the HD program package CFD-ACE(V2003) together with the corresponding boundary conditions. For 3D HD calculations, moderate grids and the RNG k-ε turbulence model are used. The features of the flow and the temperature field structure in different cases (only thermogravitational convection, flow with rotation influence) under the magnetic field are investigated. It is shown that the flow and temperature distributions in all cases are strongly influenced by the magnetic field of 0.08-0.16 T. The crucible and crystal rotation together with the horizontal DC field creates flow and temperature distribution with a very complicated 3D structure.
AB - The paper presents an investigation of the turbulent flow features in a CZ crystal growth system with a horizontal DC magnetic field by 3D mathematical modelling. A laboratory model with InGaSn eutectic and with a 20″ crucible is considered. The model corresponds to an industrial silicon crystal growth system. A 3D model for the scalar potential induced in the melt by a horizontal DC magnetic field is implemented in the HD program package CFD-ACE(V2003) together with the corresponding boundary conditions. For 3D HD calculations, moderate grids and the RNG k-ε turbulence model are used. The features of the flow and the temperature field structure in different cases (only thermogravitational convection, flow with rotation influence) under the magnetic field are investigated. It is shown that the flow and temperature distributions in all cases are strongly influenced by the magnetic field of 0.08-0.16 T. The crucible and crystal rotation together with the horizontal DC field creates flow and temperature distribution with a very complicated 3D structure.
KW - A1. Computer simulation
KW - A1. Fluid flows
KW - A1. Heat transfer
KW - A2. Industrial crystallization
KW - A2. Magnetic field-assisted Czochralski method
KW - B2. Semiconducting silicon
UR - http://www.scopus.com/inward/record.url?scp=0842279562&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2003.10.071
DO - 10.1016/j.jcrysgro.2003.10.071
M3 - Article
AN - SCOPUS:0842279562
VL - 262
SP - 157
EP - 167
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-4
ER -