Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 248-250 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi - Rapid Research Letters |
| Jahrgang | 2 |
| Ausgabenummer | 6 |
| Publikationsstatus | Veröffentlicht - Dez. 2008 |
| Extern publiziert | Ja |
Abstract
Aluminium-doped p-type (Al-p+) silicon emitters fabricated by means of a simple screen-printing process are effectively passivated by plasma-enhanced chemical-vapour deposited amorphous silicon (a-Si). We measure an emitter saturation current density of only 246 fA/cm2, which is the lowest value achieved so far for a simple screen-printed Al-p+ emitter on silicon. In order to demonstrate the applicability of this easy tofabricate p+ emitter to high-efficiency silicon solar cells, we implement our passivated p+ emitter into an n+np + solar cell structure. An independently confirmed conversion efficiency of 19.7% is achieved using n-type phosphorus-doped Czochralski-grown silicon as bulk material, clearly demonstrating the high-efficiency potential of the newly developed a-Si passivated Al-p+ emitter.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi - Rapid Research Letters, Jahrgang 2, Nr. 6, 12.2008, S. 248-250.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - N-type silicon solar cells with surface-passivated screen-printed aluminium-alloyed rear emitter
AU - Bock, Robert
AU - Schmidt, Jan
AU - Brendel, Rolf
N1 - Funding Information: Funding was pro-vided by the State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under Contract No. 0327666.
PY - 2008/12
Y1 - 2008/12
N2 - Aluminium-doped p-type (Al-p+) silicon emitters fabricated by means of a simple screen-printing process are effectively passivated by plasma-enhanced chemical-vapour deposited amorphous silicon (a-Si). We measure an emitter saturation current density of only 246 fA/cm2, which is the lowest value achieved so far for a simple screen-printed Al-p+ emitter on silicon. In order to demonstrate the applicability of this easy tofabricate p+ emitter to high-efficiency silicon solar cells, we implement our passivated p+ emitter into an n+np + solar cell structure. An independently confirmed conversion efficiency of 19.7% is achieved using n-type phosphorus-doped Czochralski-grown silicon as bulk material, clearly demonstrating the high-efficiency potential of the newly developed a-Si passivated Al-p+ emitter.
AB - Aluminium-doped p-type (Al-p+) silicon emitters fabricated by means of a simple screen-printing process are effectively passivated by plasma-enhanced chemical-vapour deposited amorphous silicon (a-Si). We measure an emitter saturation current density of only 246 fA/cm2, which is the lowest value achieved so far for a simple screen-printed Al-p+ emitter on silicon. In order to demonstrate the applicability of this easy tofabricate p+ emitter to high-efficiency silicon solar cells, we implement our passivated p+ emitter into an n+np + solar cell structure. An independently confirmed conversion efficiency of 19.7% is achieved using n-type phosphorus-doped Czochralski-grown silicon as bulk material, clearly demonstrating the high-efficiency potential of the newly developed a-Si passivated Al-p+ emitter.
UR - http://www.scopus.com/inward/record.url?scp=70449637858&partnerID=8YFLogxK
U2 - 10.1002/pssr.200802168
DO - 10.1002/pssr.200802168
M3 - Article
AN - SCOPUS:70449637858
VL - 2
SP - 248
EP - 250
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 6
ER -