Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | IEEE 52nd Photovoltaic Specialist Conference |
| Untertitel | PVSC 2024 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 1686-1689 |
| Seitenumfang | 4 |
| ISBN (elektronisch) | 9781665464260 |
| ISBN (Print) | 978-1-6654-7582-2 |
| Publikationsstatus | Veröffentlicht - 9 Juni 2024 |
| Veranstaltung | 52nd IEEE Photovoltaic Specialist Conference, PVSC 2024 - Seattle, USA / Vereinigte Staaten Dauer: 9 Juni 2024 → 14 Juni 2024 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
We introduce a novel approach to streamline the processing sequence of fully passivated interdigitated back contact (IBC) solar cells by employing self-aligned separation of the poly-silicon layers. The proposed method for such n-type self-aligned back contact (SABC) solar cell exploits a laser-structured and under-etched p-type poly-Si layer to locally separate a subsequent directionally deposited n-type poly-Silicon layer by physical vapor deposition (PVD). While the n-type poly-Si layer covers the fully exposed rear surface, it is interrupted at the trenches. Consequently, the base contact is formed by the n-type poly-Si only, but the emitter is formed by a stack consisting of a p-type poly and a n-type poly-Silicon layer. Due to the high doping concentration this layer stack is targeted to form a low-resistive tunnelling junction. Since the n-type poly caps both emitter and base contact, it allows a single metallisation step using the same paste for both polarities. Moreover, this innovative technique offers reduced processing steps and enables ultra-fine separation of the poly-Silicon layers, which in turn allows a narrow finger pitch. The n-type poly-Si deposited by PVD on the full wafer area yields an excellent open circuit voltage iVoc=738 mV and SEM images show a separation of the n-type poly-Si layer across the trench edge. Implementing this isolation technique of the n-type poly layer on passivated IBC solar cells will enable a self-aligned separation with just one structuring process step.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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IEEE 52nd Photovoltaic Specialist Conference: PVSC 2024. Institute of Electrical and Electronics Engineers Inc., 2024. S. 1686-1689 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - n-type polysilicon by PVD enabling self-aligned back contact solar cells
AU - Hoffmann, Erik
AU - Jäger, Philip
AU - Gregory, Geoffrey
AU - Khan, Muhammad
AU - Khan, Nabeel
AU - Dullweber, Thorsten
AU - Brendel, Rolf
AU - Centazzo, Massimo
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024/6/9
Y1 - 2024/6/9
N2 - We introduce a novel approach to streamline the processing sequence of fully passivated interdigitated back contact (IBC) solar cells by employing self-aligned separation of the poly-silicon layers. The proposed method for such n-type self-aligned back contact (SABC) solar cell exploits a laser-structured and under-etched p-type poly-Si layer to locally separate a subsequent directionally deposited n-type poly-Silicon layer by physical vapor deposition (PVD). While the n-type poly-Si layer covers the fully exposed rear surface, it is interrupted at the trenches. Consequently, the base contact is formed by the n-type poly-Si only, but the emitter is formed by a stack consisting of a p-type poly and a n-type poly-Silicon layer. Due to the high doping concentration this layer stack is targeted to form a low-resistive tunnelling junction. Since the n-type poly caps both emitter and base contact, it allows a single metallisation step using the same paste for both polarities. Moreover, this innovative technique offers reduced processing steps and enables ultra-fine separation of the poly-Silicon layers, which in turn allows a narrow finger pitch. The n-type poly-Si deposited by PVD on the full wafer area yields an excellent open circuit voltage iVoc=738 mV and SEM images show a separation of the n-type poly-Si layer across the trench edge. Implementing this isolation technique of the n-type poly layer on passivated IBC solar cells will enable a self-aligned separation with just one structuring process step.
AB - We introduce a novel approach to streamline the processing sequence of fully passivated interdigitated back contact (IBC) solar cells by employing self-aligned separation of the poly-silicon layers. The proposed method for such n-type self-aligned back contact (SABC) solar cell exploits a laser-structured and under-etched p-type poly-Si layer to locally separate a subsequent directionally deposited n-type poly-Silicon layer by physical vapor deposition (PVD). While the n-type poly-Si layer covers the fully exposed rear surface, it is interrupted at the trenches. Consequently, the base contact is formed by the n-type poly-Si only, but the emitter is formed by a stack consisting of a p-type poly and a n-type poly-Silicon layer. Due to the high doping concentration this layer stack is targeted to form a low-resistive tunnelling junction. Since the n-type poly caps both emitter and base contact, it allows a single metallisation step using the same paste for both polarities. Moreover, this innovative technique offers reduced processing steps and enables ultra-fine separation of the poly-Silicon layers, which in turn allows a narrow finger pitch. The n-type poly-Si deposited by PVD on the full wafer area yields an excellent open circuit voltage iVoc=738 mV and SEM images show a separation of the n-type poly-Si layer across the trench edge. Implementing this isolation technique of the n-type poly layer on passivated IBC solar cells will enable a self-aligned separation with just one structuring process step.
UR - http://www.scopus.com/inward/record.url?scp=85211573281&partnerID=8YFLogxK
U2 - 10.1109/PVSC57443.2024.10749366
DO - 10.1109/PVSC57443.2024.10749366
M3 - Conference contribution
AN - SCOPUS:85211573281
SN - 978-1-6654-7582-2
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1686
EP - 1689
BT - IEEE 52nd Photovoltaic Specialist Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 52nd IEEE Photovoltaic Specialist Conference, PVSC 2024
Y2 - 9 June 2024 through 14 June 2024
ER -