Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 7-12 |
Seitenumfang | 6 |
Fachzeitschrift | Materials Research Society Symposium Proceedings |
Jahrgang | 928 |
Ausgabenummer | 1 |
Publikationsstatus | Veröffentlicht - 1 Sept. 2006 |
Veranstaltung | 2006 MRS Spring Meeting - San Francisco, CA, USA / Vereinigte Staaten Dauer: 17 Apr. 2006 → 21 Apr. 2006 |
Abstract
Double-barrier insulator/Si/insulator nanostructures on Si(111) have been grown using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd 2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
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in: Materials Research Society Symposium Proceedings, Jahrgang 928, Nr. 1, 01.09.2006, S. 7-12.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures
AU - Fissel, Andreas
AU - Kuehne, Dirk
AU - Bugiel, Eberhard
AU - Osten, H. Joerg
PY - 2006/9/1
Y1 - 2006/9/1
N2 - Double-barrier insulator/Si/insulator nanostructures on Si(111) have been grown using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd 2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.
AB - Double-barrier insulator/Si/insulator nanostructures on Si(111) have been grown using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd 2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.
UR - http://www.scopus.com/inward/record.url?scp=33947709280&partnerID=8YFLogxK
U2 - 10.1557/proc-0928-gg03-04
DO - 10.1557/proc-0928-gg03-04
M3 - Article
AN - SCOPUS:33947709280
VL - 928
SP - 7
EP - 12
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
SN - 0272-9172
IS - 1
T2 - 2006 MRS Spring Meeting
Y2 - 17 April 2006 through 21 April 2006
ER -