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Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autorschaft

  • K. M. Haendel
  • U. Denker
  • O. G. Schmidt
  • A. G.M. Jansen
  • R. J. Haug

Organisationseinheiten

Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
  • Centre national de la recherche scientifique (CNRS)
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Details

OriginalspracheEnglisch
Seiten (von - bis)487-490
Seitenumfang4
FachzeitschriftPhysica E: Low-Dimensional Systems and Nanostructures
Jahrgang21
Ausgabenummer2-4
PublikationsstatusVeröffentlicht - März 2004
VeranstaltungEleventh International Conference on Modulation (MSS11) - Nara, Japan
Dauer: 14 Juli 2003 → 18 Juli 2003

Abstract

We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.

ASJC Scopus Sachgebiete

Zitieren

Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots. / Haendel, K. M.; Denker, U.; Schmidt, O. G. et al.
in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 21, Nr. 2-4, 03.2004, S. 487-490.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Haendel KM, Denker U, Schmidt OG, Jansen AGM, Haug RJ. Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots. Physica E: Low-Dimensional Systems and Nanostructures. 2004 Mär;21(2-4):487-490. doi: 10.1016/j.physe.2003.11.048
Haendel, K. M. ; Denker, U. ; Schmidt, O. G. et al. / Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots. in: Physica E: Low-Dimensional Systems and Nanostructures. 2004 ; Jahrgang 21, Nr. 2-4. S. 487-490.
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abstract = "We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.",
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Download

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T1 - Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots

AU - Haendel, K. M.

AU - Denker, U.

AU - Schmidt, O. G.

AU - Jansen, A. G.M.

AU - Haug, R. J.

PY - 2004/3

Y1 - 2004/3

N2 - We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.

AB - We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.

KW - Ge quantum dots

KW - Hopping conduction

KW - Hysteresis

KW - Metal-insulator transition

KW - MSS-11

KW - Switching

UR - http://www.scopus.com/inward/record.url?scp=1642416264&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.11.048

DO - 10.1016/j.physe.2003.11.048

M3 - Conference article

AN - SCOPUS:1642416264

VL - 21

SP - 487

EP - 490

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

T2 - Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

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