Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 39-42 |
| Seitenumfang | 4 |
| Fachzeitschrift | Materials Science Forum |
| Jahrgang | 384-385 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 2002 |
| Extern publiziert | Ja |
| Veranstaltung | 11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS) - Vilnius, Litauen Dauer: 27 Aug. 2001 → 29 Aug. 2001 |
Abstract
Results for interband and intraband absorption and emission in quantum dot structures are presented. The observed peaks correspond to interband electron transitions between ground and excited states of QDs. Near infrared (λ ≈ 1 μm) lasing was obtained at high intensities of excitation. Surface mid infrared (λ > 10 μm) photoluminescence connected with the intraband electron transitions between the states of wetting layer and the ground states in QDs was also studied.
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- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
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in: Materials Science Forum, Jahrgang 384-385, 01.01.2002, S. 39-42.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Nonequilibrium spectroscopy of inter- and intraband transitions in quantum dot structures
AU - Vorobjev, L. E.
AU - Glukhovskoy, A. V.
AU - Danilov, S. N.
AU - Panevin, V. Yu
AU - Firsov, D. A.
AU - Fedosov, N. K.
AU - Shalygin, V. A.
AU - Andreev, A. D.
AU - Volovik, B. V.
AU - Ledentsov, N. N.
AU - Livshits, D. A.
AU - Ustinov, V. M.
AU - Tsatsul'nikov, A. F.
AU - Shernyakov, Yu M.
AU - Grundmann, M.
AU - Weber, A.
AU - Fossard, F.
AU - Julien, F. H.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Results for interband and intraband absorption and emission in quantum dot structures are presented. The observed peaks correspond to interband electron transitions between ground and excited states of QDs. Near infrared (λ ≈ 1 μm) lasing was obtained at high intensities of excitation. Surface mid infrared (λ > 10 μm) photoluminescence connected with the intraband electron transitions between the states of wetting layer and the ground states in QDs was also studied.
AB - Results for interband and intraband absorption and emission in quantum dot structures are presented. The observed peaks correspond to interband electron transitions between ground and excited states of QDs. Near infrared (λ ≈ 1 μm) lasing was obtained at high intensities of excitation. Surface mid infrared (λ > 10 μm) photoluminescence connected with the intraband electron transitions between the states of wetting layer and the ground states in QDs was also studied.
KW - Fourier transform spectrometry
KW - Photoinduced absorption and emission
KW - Quantum dots
UR - http://www.scopus.com/inward/record.url?scp=18244419608&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/msf.384-385.39
DO - 10.4028/www.scientific.net/msf.384-385.39
M3 - Conference article
AN - SCOPUS:18244419608
VL - 384-385
SP - 39
EP - 42
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
T2 - 11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS)
Y2 - 27 August 2001 through 29 August 2001
ER -