TY - JOUR

T1 - Non-adiabatic single-electron pumps in a dopant-free GaAs/AlGaAs 2DEG

AU - Buonacorsi, B.

AU - Sfigakis, F.

AU - Shetty, A.

AU - Tam, M. C.

AU - Kim, H. S.

AU - Harrigan, S. R.

AU - Hohls, F.

AU - Reimer, M. E.

AU - Wasilewski, Z. R.

AU - Baugh, J.

N1 - Funding Information: The authors thank Christine Nicoll and Masaya Kataoka for useful discussions. S.R.H. acknowledges support from a Waterloo Institute for Nanotechnology (WIN) Nanofellowship. This research was undertaken thanks in part to funding from the Canada First Research Excellence Fund (Transformative Quantum Technologies), Defence Research and Development Canada (DRDC), and the Natural Sciences and Engineering Research Council (NSERC) of Canada. The University of Waterloo’s QNFCF facility was used for this work. This infrastructure would not be possible without the significant contributions of CFREF-TQT, CFI, ISED, the Ontario Ministry of Research and Innovation, and Mike and Ophelia Lazaridis. Their support is gratefully acknowledged. F.H. has received funding from the EMPIR program co-financed by the Participating States, the European Union’s Horizon 2020 research and innovation program, Grant No. 17FUN04 SEQUOIA, and the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy—EXC-2123 QuantumFrontiers—No. 390837967.

PY - 2021/9/13

Y1 - 2021/9/13

N2 - We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases. The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pumping in zero magnetic field and temperatures up to 5 K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit δ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.

AB - We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases. The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pumping in zero magnetic field and temperatures up to 5 K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit δ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.

UR - http://www.scopus.com/inward/record.url?scp=85114962460&partnerID=8YFLogxK

U2 - 10.1063/5.0062486

DO - 10.1063/5.0062486

M3 - Article

AN - SCOPUS:85114962460

VL - 119

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 11

M1 - 114001

ER -