Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1073-1082 |
| Seitenumfang | 10 |
| Fachzeitschrift | Physics Procedia |
| Jahrgang | 56 |
| Ausgabenummer | C |
| Publikationsstatus | Veröffentlicht - 9 Sept. 2014 |
| Extern publiziert | Ja |
| Veranstaltung | International Conference on Laser Assisted Net Shape Engineering, LANE 2014 - Fürth, Deutschland Dauer: 8 Sept. 2014 → 11 Sept. 2014 |
Abstract
Transparent Conducting Oxides (TCOs) are widespread as transparent electrodes in thin film photovoltaics and electronics. Post deposition furnace annealing improves the electrical and optical properties of TCOs. Disadvantages of furnace annealing are large energy consumption and long processing time due to long-lasting heating ramps. ZnO:Al thin films (AZO) with a low electrical resistivity and high transparency are usually sputtered at substrate temperatures up to several hundred °C. In this study post deposition near infrared (NIR) continuous wave (CW) laser annealing of room-temperature deposited AZO thin films is investigated. The surface temperature is determined by infrared thermography. The averaged transmittance is increased by T300-1100 nm ≤ 7.2 % due to a lower absorptance at a constant reflectance. The resistivity is reduced to ρ = 360 μΩcm, because of a higher electron mobility μ. These promising results show the potential of laser annealing for the replacement of furnace annealing in industrial applications.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
Ziele für nachhaltige Entwicklung
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in: Physics Procedia, Jahrgang 56, Nr. C, 09.09.2014, S. 1073-1082.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - NIR-CW-laser annealing of room temperature sputtered ZnO:Al
AU - Schütz, Viktor
AU - Sittinger, V.
AU - Götzendörfer, S.
AU - Kalmbach, C. C.
AU - Fu, R.
AU - von Witzendorff, Philipp
AU - Britze, C.
AU - Suttmann, Oliver
AU - Overmeyer, Ludger
N1 - Funding information: This work has been funded by the German “Federal Ministry for the Environment, Nature Conservation, Building and Nuclear Safety”, Contract No. 0325299A.
PY - 2014/9/9
Y1 - 2014/9/9
N2 - Transparent Conducting Oxides (TCOs) are widespread as transparent electrodes in thin film photovoltaics and electronics. Post deposition furnace annealing improves the electrical and optical properties of TCOs. Disadvantages of furnace annealing are large energy consumption and long processing time due to long-lasting heating ramps. ZnO:Al thin films (AZO) with a low electrical resistivity and high transparency are usually sputtered at substrate temperatures up to several hundred °C. In this study post deposition near infrared (NIR) continuous wave (CW) laser annealing of room-temperature deposited AZO thin films is investigated. The surface temperature is determined by infrared thermography. The averaged transmittance is increased by T300-1100 nm ≤ 7.2 % due to a lower absorptance at a constant reflectance. The resistivity is reduced to ρ = 360 μΩcm, because of a higher electron mobility μ. These promising results show the potential of laser annealing for the replacement of furnace annealing in industrial applications.
AB - Transparent Conducting Oxides (TCOs) are widespread as transparent electrodes in thin film photovoltaics and electronics. Post deposition furnace annealing improves the electrical and optical properties of TCOs. Disadvantages of furnace annealing are large energy consumption and long processing time due to long-lasting heating ramps. ZnO:Al thin films (AZO) with a low electrical resistivity and high transparency are usually sputtered at substrate temperatures up to several hundred °C. In this study post deposition near infrared (NIR) continuous wave (CW) laser annealing of room-temperature deposited AZO thin films is investigated. The surface temperature is determined by infrared thermography. The averaged transmittance is increased by T300-1100 nm ≤ 7.2 % due to a lower absorptance at a constant reflectance. The resistivity is reduced to ρ = 360 μΩcm, because of a higher electron mobility μ. These promising results show the potential of laser annealing for the replacement of furnace annealing in industrial applications.
KW - Electro-optical parameters
KW - Laser-annealing
KW - TCO
UR - http://www.scopus.com/inward/record.url?scp=84923138969&partnerID=8YFLogxK
U2 - 10.1016/j.phpro.2014.08.020
DO - 10.1016/j.phpro.2014.08.020
M3 - Conference article
AN - SCOPUS:84923138969
VL - 56
SP - 1073
EP - 1082
JO - Physics Procedia
JF - Physics Procedia
SN - 1875-3884
IS - C
T2 - International Conference on Laser Assisted Net Shape Engineering, LANE 2014
Y2 - 8 September 2014 through 11 September 2014
ER -