Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2024 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (elektronisch) | 9798350362404 |
| ISBN (Print) | 979-8-3503-6241-1 |
| Publikationsstatus | Veröffentlicht - 16 Sept. 2024 |
| Veranstaltung | 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2024 - Cardiff, Großbritannien / Vereinigtes Königreich Dauer: 16 Sept. 2024 → 18 Sept. 2024 |
Abstract
Power semiconductors made from Gallium Nitride hold great potential for demanding applications for example in aircraft power electronic systems. Here, the design needs to consider device failure due to cosmic ray, where neutrons are the most critical particles. In contrast to Silicon and Silicon Carbide devices, failure data of Gallium Nitride transistors are not widely available. In this paper, the failure rate of Gallium Nitride transistors with a rated voltage of 650 V was determined by accelerated neutron irradiation and compared to Silicon Carbide devices. For Gallium Nitride, failures could only be observed at voltages above the rated voltage and close to the breakdown voltage, demonstrating the great potential of Gallium Nitride devices, considering the current device technologies.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Energieanlagenbau und Kraftwerkstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Physik und Astronomie (insg.)
- Instrumentierung
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2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2024. Institute of Electrical and Electronics Engineers Inc., 2024.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Neutron Radiation-Induced Failure Rate of 650 v Lateral GaN Power Devices
AU - Fauth, Leon
AU - Beckemeier, Christian
AU - Goller, Maximilian
AU - Lutz, Josef
AU - Basler, Thomas
AU - Friebe, Jens
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024/9/16
Y1 - 2024/9/16
N2 - Power semiconductors made from Gallium Nitride hold great potential for demanding applications for example in aircraft power electronic systems. Here, the design needs to consider device failure due to cosmic ray, where neutrons are the most critical particles. In contrast to Silicon and Silicon Carbide devices, failure data of Gallium Nitride transistors are not widely available. In this paper, the failure rate of Gallium Nitride transistors with a rated voltage of 650 V was determined by accelerated neutron irradiation and compared to Silicon Carbide devices. For Gallium Nitride, failures could only be observed at voltages above the rated voltage and close to the breakdown voltage, demonstrating the great potential of Gallium Nitride devices, considering the current device technologies.
AB - Power semiconductors made from Gallium Nitride hold great potential for demanding applications for example in aircraft power electronic systems. Here, the design needs to consider device failure due to cosmic ray, where neutrons are the most critical particles. In contrast to Silicon and Silicon Carbide devices, failure data of Gallium Nitride transistors are not widely available. In this paper, the failure rate of Gallium Nitride transistors with a rated voltage of 650 V was determined by accelerated neutron irradiation and compared to Silicon Carbide devices. For Gallium Nitride, failures could only be observed at voltages above the rated voltage and close to the breakdown voltage, demonstrating the great potential of Gallium Nitride devices, considering the current device technologies.
KW - cosmic radiation
KW - GaN
KW - Single Event Effects
UR - http://www.scopus.com/inward/record.url?scp=85215661925&partnerID=8YFLogxK
U2 - 10.1109/WiPDAEurope62087.2024.10797418
DO - 10.1109/WiPDAEurope62087.2024.10797418
M3 - Conference contribution
AN - SCOPUS:85215661925
SN - 979-8-3503-6241-1
BT - 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2024
Y2 - 16 September 2024 through 18 September 2024
ER -