Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 314-317 |
Seitenumfang | 4 |
Fachzeitschrift | Physica B: Physics of Condensed Matter |
Jahrgang | 184 |
Ausgabenummer | 1-4 |
Publikationsstatus | Veröffentlicht - Feb. 1993 |
Extern publiziert | Ja |
Abstract
We report observation of a negative thermodynamic density of states for two-dimensional electrons in GaAs/AlGaAs heterojunctions in the ultraquantum limit. The effect is most pronounced in the vicinity of filling factor v=1 and v<1/3. We simultaneously observe a metal-insulator transition which is found to occur at the same filling factor, vc∼-0.28, in rather wide ranges of magnetic field and sample mobility. The negative thermodynamic density of states at v<1/3 indicates the importance of the electron-electron interaction for this transition. The transition at zero magnetic field is observed to be sample-dependent.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Physica B: Physics of Condensed Matter, Jahrgang 184, Nr. 1-4, 02.1993, S. 314-317.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
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TY - JOUR
T1 - Negative density of states of a 2DEG in the ultraquantum limit
AU - Dorozhkin, S. I.
AU - Haug, R. J.
AU - von Klitzing, K.
AU - Ploog, K.
PY - 1993/2
Y1 - 1993/2
N2 - We report observation of a negative thermodynamic density of states for two-dimensional electrons in GaAs/AlGaAs heterojunctions in the ultraquantum limit. The effect is most pronounced in the vicinity of filling factor v=1 and v<1/3. We simultaneously observe a metal-insulator transition which is found to occur at the same filling factor, vc∼-0.28, in rather wide ranges of magnetic field and sample mobility. The negative thermodynamic density of states at v<1/3 indicates the importance of the electron-electron interaction for this transition. The transition at zero magnetic field is observed to be sample-dependent.
AB - We report observation of a negative thermodynamic density of states for two-dimensional electrons in GaAs/AlGaAs heterojunctions in the ultraquantum limit. The effect is most pronounced in the vicinity of filling factor v=1 and v<1/3. We simultaneously observe a metal-insulator transition which is found to occur at the same filling factor, vc∼-0.28, in rather wide ranges of magnetic field and sample mobility. The negative thermodynamic density of states at v<1/3 indicates the importance of the electron-electron interaction for this transition. The transition at zero magnetic field is observed to be sample-dependent.
UR - http://www.scopus.com/inward/record.url?scp=0027540152&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(93)90372-D
DO - 10.1016/0921-4526(93)90372-D
M3 - Article
AN - SCOPUS:0027540152
VL - 184
SP - 314
EP - 317
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
SN - 0921-4526
IS - 1-4
ER -