Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 447-449 |
| Seitenumfang | 3 |
| Fachzeitschrift | NANOTECHNOLOGY |
| Jahrgang | 12 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - Dez. 2001 |
| Extern publiziert | Ja |
| Veranstaltung | 9th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russland Dauer: 18 Juni 2001 → 22 Juni 2001 |
Abstract
Results of a photoluminescence and electroluminescence study of vertically coupled In0.5Ga0.5As/GaAs quantum dot (QD) structures with an extended waveguide (1.24 μm thick) are presented. Spectra of spontaneous and stimulated near-infrared (λ ≃ 1 μ.m) emission as well as spectra of spontaneous mid-infrared (MIR) (λ ≃ 12 μm) emission are obtained under optical and electrical pumping. It is shown that the observed MIR emission is connected with intraband electron optical transitions in the QD structures.
ASJC Scopus Sachgebiete
- Chemische Verfahrenstechnik (insg.)
- Bioengineering
- Chemie (insg.)
- Allgemeine Chemie
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: NANOTECHNOLOGY, Jahrgang 12, Nr. 4, 12.2001, S. 447-449.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures
AU - Shalygin, V. A.
AU - Vorobjev, L. E.
AU - Glukhovskoy, A.
AU - Danilov, S. N.
AU - Panevin, V. Yu
AU - Firsov, D. A.
AU - Volovik, B. V.
AU - Ledentsov, N. N.
AU - Livshits, D. A.
AU - Ustinov, V. M.
AU - Shernyakov, Yu M.
AU - Tsatsul'nikov, A. F.
AU - Weber, A.
AU - Grundmann, M.
PY - 2001/12
Y1 - 2001/12
N2 - Results of a photoluminescence and electroluminescence study of vertically coupled In0.5Ga0.5As/GaAs quantum dot (QD) structures with an extended waveguide (1.24 μm thick) are presented. Spectra of spontaneous and stimulated near-infrared (λ ≃ 1 μ.m) emission as well as spectra of spontaneous mid-infrared (MIR) (λ ≃ 12 μm) emission are obtained under optical and electrical pumping. It is shown that the observed MIR emission is connected with intraband electron optical transitions in the QD structures.
AB - Results of a photoluminescence and electroluminescence study of vertically coupled In0.5Ga0.5As/GaAs quantum dot (QD) structures with an extended waveguide (1.24 μm thick) are presented. Spectra of spontaneous and stimulated near-infrared (λ ≃ 1 μ.m) emission as well as spectra of spontaneous mid-infrared (MIR) (λ ≃ 12 μm) emission are obtained under optical and electrical pumping. It is shown that the observed MIR emission is connected with intraband electron optical transitions in the QD structures.
UR - http://www.scopus.com/inward/record.url?scp=0035673626&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/12/4/312
DO - 10.1088/0957-4484/12/4/312
M3 - Conference article
AN - SCOPUS:0035673626
VL - 12
SP - 447
EP - 449
JO - NANOTECHNOLOGY
JF - NANOTECHNOLOGY
SN - 0957-4484
IS - 4
T2 - 9th International Symposium on Nanostructures: Physics and Technology
Y2 - 18 June 2001 through 22 June 2001
ER -