Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1107-1109 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 75 |
| Ausgabenummer | 8 |
| Publikationsstatus | Veröffentlicht - 23 Aug. 1999 |
Abstract
An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 75, Nr. 8, 23.08.1999, S. 1107-1109.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Nanomachining of mesoscopic electronic devices using an atomic force microscope
AU - Schumacher, H. W.
AU - Keyser, U. F.
AU - Zeitler, U.
AU - Haug, R. J.
AU - Eberl, K.
PY - 1999/8/23
Y1 - 1999/8/23
N2 - An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated.
AB - An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated.
UR - http://www.scopus.com/inward/record.url?scp=0000240088&partnerID=8YFLogxK
U2 - 10.1063/1.124611
DO - 10.1063/1.124611
M3 - Article
AN - SCOPUS:0000240088
VL - 75
SP - 1107
EP - 1109
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 8
ER -