TY - GEN

T1 - Multi-terminal magnetotransport measurements over a tunable graphene p-n junction created by AFM-nanomachining

AU - Schmidt, H.

AU - Smirnov, D.

AU - Rode, J.

AU - Haug, R. J.

PY - 2013/12/31

Y1 - 2013/12/31

N2 - An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect and Hall measurements. It is shown, that the nanomachining leads to an effective doping in the altered area and therefore to a difference in the charge carrier density of Δn = 3.5·1015m-2 between the unchanged and changed part. These two parts can be tuned with a global backgate to form a junction of different polarity, i.e. a p-n junction.

AB - An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect and Hall measurements. It is shown, that the nanomachining leads to an effective doping in the altered area and therefore to a difference in the charge carrier density of Δn = 3.5·1015m-2 between the unchanged and changed part. These two parts can be tuned with a global backgate to form a junction of different polarity, i.e. a p-n junction.

KW - AFM

KW - bipolar

KW - Graphene

UR - http://www.scopus.com/inward/record.url?scp=84907337231&partnerID=8YFLogxK

U2 - 10.1063/1.4848342

DO - 10.1063/1.4848342

M3 - Conference contribution

AN - SCOPUS:84907337231

SN - 9780735411944

T3 - AIP Conference Proceedings

SP - 175

EP - 176

BT - Physics of Semiconductors

T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012

Y2 - 29 July 2012 through 3 August 2012

ER -