Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Key Engineering Materials |
| Seiten | 1629-1632 |
| Seitenumfang | 4 |
| Band | 136 |
| Auflage | 3 |
| Publikationsstatus | Veröffentlicht - 1997 |
Publikationsreihe
| Name | Key Engineering Materials |
|---|---|
| Herausgeber (Verlag) | Trans Tech Publications |
| ISSN (Print) | 1013-9826 |
Abstract
Based on thermogravimetric measurements on Si-SiC coated C/C materials (reference material) the temperature dependence of the linear mass loss rates is interpreted in the temperature range 500°C < T < 1700°C. Only in the temperature range 1050°C < T < 1550°C the oxidation rate is close to or even lower than the limit for long-term application. Pulsed Laser Deposition (PLD) allows the ablation of nonconductive and high melting point targets and the preparation of films with complex composition. High energy impact leads to melting and evaporation of the target material in a single step. Therefore the flux of the metal components is stoichiometric. Mullite coatings with a thickness of 2.5 μm and a preoxidation treatment of the substrate material improved the oxidation behaviour significantly. Because of SiO2 formation at the mullite-SiC interface all samples exhibited a mass increase on oxidation. The inward diffusion of oxygen across the outer mullite containing layer controlled the kinetics of the reaction as was deduced from 18O diffusivity measurements in PLD mullite layers. The calculated oxidation rates resulting from the diffusion parameters in SiO2 and mullite are close to the thermogravimetric data.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
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- Apa
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- BibTex
- RIS
Key Engineering Materials. Band 136 3. Aufl. 1997. S. 1629-1632 (Key Engineering Materials).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Beitrag in Buch/Sammelwerk › Forschung › Peer-Review
}
TY - CHAP
T1 - Mullite based oxidation protection for SiC-C/C composites in air at temperatures up to 1900 K
AU - Fritze, H.
AU - Jojic, J.
AU - Witke, T.
AU - Rüscher, C.
AU - Weber, S.
AU - Scherrer, S.
AU - Schultrich, B.
AU - Borchardt, G.
PY - 1997
Y1 - 1997
N2 - Based on thermogravimetric measurements on Si-SiC coated C/C materials (reference material) the temperature dependence of the linear mass loss rates is interpreted in the temperature range 500°C < T < 1700°C. Only in the temperature range 1050°C < T < 1550°C the oxidation rate is close to or even lower than the limit for long-term application. Pulsed Laser Deposition (PLD) allows the ablation of nonconductive and high melting point targets and the preparation of films with complex composition. High energy impact leads to melting and evaporation of the target material in a single step. Therefore the flux of the metal components is stoichiometric. Mullite coatings with a thickness of 2.5 μm and a preoxidation treatment of the substrate material improved the oxidation behaviour significantly. Because of SiO2 formation at the mullite-SiC interface all samples exhibited a mass increase on oxidation. The inward diffusion of oxygen across the outer mullite containing layer controlled the kinetics of the reaction as was deduced from 18O diffusivity measurements in PLD mullite layers. The calculated oxidation rates resulting from the diffusion parameters in SiO2 and mullite are close to the thermogravimetric data.
AB - Based on thermogravimetric measurements on Si-SiC coated C/C materials (reference material) the temperature dependence of the linear mass loss rates is interpreted in the temperature range 500°C < T < 1700°C. Only in the temperature range 1050°C < T < 1550°C the oxidation rate is close to or even lower than the limit for long-term application. Pulsed Laser Deposition (PLD) allows the ablation of nonconductive and high melting point targets and the preparation of films with complex composition. High energy impact leads to melting and evaporation of the target material in a single step. Therefore the flux of the metal components is stoichiometric. Mullite coatings with a thickness of 2.5 μm and a preoxidation treatment of the substrate material improved the oxidation behaviour significantly. Because of SiO2 formation at the mullite-SiC interface all samples exhibited a mass increase on oxidation. The inward diffusion of oxygen across the outer mullite containing layer controlled the kinetics of the reaction as was deduced from 18O diffusivity measurements in PLD mullite layers. The calculated oxidation rates resulting from the diffusion parameters in SiO2 and mullite are close to the thermogravimetric data.
KW - Carbon-reinforced carbon
KW - Mullite
KW - Oxidation protection
KW - Oxygen diffusion
KW - Pulsed laser deposition
UR - http://www.scopus.com/inward/record.url?scp=0030680477&partnerID=8YFLogxK
M3 - Contribution to book/anthology
AN - SCOPUS:0030680477
VL - 136
T3 - Key Engineering Materials
SP - 1629
EP - 1632
BT - Key Engineering Materials
ER -