Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 × 7)-"1 × 1" surface phase transition

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)27-35
Seitenumfang9
FachzeitschriftSurface science
Jahrgang618
PublikationsstatusVeröffentlicht - Dez. 2013

Abstract

Development of surface morphology in Si molecular beam epitaxy on mesa-structured Si(111) at temperatures around the (7 × 7)-"1 × 1" surface phase transition was studied by atomic force microscopy. Significant changes in surface morphology were found for a small increase in temperature near the surface phase transition, accompanied by a strong increase in step-free area dimension. This behavior is reported for the first time for epitaxial silicon growth, but supports earlier in situ studies of the thermal decay of 2-dimensional islands and voids on Si(111) close to the surface phase transition using low energy electron microscopy by Hibino et al. (Phys. Rev. B 63, 245402, 2001). The observed changes in surface morphology clearly demonstrate the interplay of crystal growth and the surface phase transformation. In particular, the simultaneous appearance of two surface phases under certain conditions and their specific influence on the growth behavior are discussed with regard to this matter.

ASJC Scopus Sachgebiete

Zitieren

Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 × 7)-"1 × 1" surface phase transition. / Krügener, Jan; Osten, H. Jörg; Fissel, Andreas.
in: Surface science, Jahrgang 618, 12.2013, S. 27-35.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Download
@article{20fa8d0941a54cecba9eb261c586e9c4,
title = "Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 × 7)-{"}1 × 1{"} surface phase transition",
abstract = "Development of surface morphology in Si molecular beam epitaxy on mesa-structured Si(111) at temperatures around the (7 × 7)-{"}1 × 1{"} surface phase transition was studied by atomic force microscopy. Significant changes in surface morphology were found for a small increase in temperature near the surface phase transition, accompanied by a strong increase in step-free area dimension. This behavior is reported for the first time for epitaxial silicon growth, but supports earlier in situ studies of the thermal decay of 2-dimensional islands and voids on Si(111) close to the surface phase transition using low energy electron microscopy by Hibino et al. (Phys. Rev. B 63, 245402, 2001). The observed changes in surface morphology clearly demonstrate the interplay of crystal growth and the surface phase transformation. In particular, the simultaneous appearance of two surface phases under certain conditions and their specific influence on the growth behavior are discussed with regard to this matter.",
keywords = "Atomic force microscopy, Mesa, Molecular beam epitaxy, Silicon, Surface phase transition",
author = "Jan Kr{\"u}gener and Osten, {H. J{\"o}rg} and Andreas Fissel",
year = "2013",
month = dec,
doi = "10.1016/j.susc.2013.08.017",
language = "English",
volume = "618",
pages = "27--35",
journal = "Surface science",
issn = "0039-6028",
publisher = "Elsevier",

}

Download

TY - JOUR

T1 - Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 × 7)-"1 × 1" surface phase transition

AU - Krügener, Jan

AU - Osten, H. Jörg

AU - Fissel, Andreas

PY - 2013/12

Y1 - 2013/12

N2 - Development of surface morphology in Si molecular beam epitaxy on mesa-structured Si(111) at temperatures around the (7 × 7)-"1 × 1" surface phase transition was studied by atomic force microscopy. Significant changes in surface morphology were found for a small increase in temperature near the surface phase transition, accompanied by a strong increase in step-free area dimension. This behavior is reported for the first time for epitaxial silicon growth, but supports earlier in situ studies of the thermal decay of 2-dimensional islands and voids on Si(111) close to the surface phase transition using low energy electron microscopy by Hibino et al. (Phys. Rev. B 63, 245402, 2001). The observed changes in surface morphology clearly demonstrate the interplay of crystal growth and the surface phase transformation. In particular, the simultaneous appearance of two surface phases under certain conditions and their specific influence on the growth behavior are discussed with regard to this matter.

AB - Development of surface morphology in Si molecular beam epitaxy on mesa-structured Si(111) at temperatures around the (7 × 7)-"1 × 1" surface phase transition was studied by atomic force microscopy. Significant changes in surface morphology were found for a small increase in temperature near the surface phase transition, accompanied by a strong increase in step-free area dimension. This behavior is reported for the first time for epitaxial silicon growth, but supports earlier in situ studies of the thermal decay of 2-dimensional islands and voids on Si(111) close to the surface phase transition using low energy electron microscopy by Hibino et al. (Phys. Rev. B 63, 245402, 2001). The observed changes in surface morphology clearly demonstrate the interplay of crystal growth and the surface phase transformation. In particular, the simultaneous appearance of two surface phases under certain conditions and their specific influence on the growth behavior are discussed with regard to this matter.

KW - Atomic force microscopy

KW - Mesa

KW - Molecular beam epitaxy

KW - Silicon

KW - Surface phase transition

UR - http://www.scopus.com/inward/record.url?scp=84885638960&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2013.08.017

DO - 10.1016/j.susc.2013.08.017

M3 - Article

AN - SCOPUS:84885638960

VL - 618

SP - 27

EP - 35

JO - Surface science

JF - Surface science

SN - 0039-6028

ER -

Von denselben Autoren