Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings of the 37th European Microwave Conference, EUMC |
| Seiten | 775-778 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 2007 |
| Veranstaltung | 37th European Microwave Conference, EUMC - Munich, Deutschland Dauer: 9 Okt. 2007 → 12 Okt. 2007 |
Publikationsreihe
| Name | Proceedings of the 37th European Microwave Conference, EUMC |
|---|
Abstract
A monolithic integrated UWB diplexer design and measurements will be presented. This diplexer is fabricated on high ohmic silicon substrate. The diplexer is based on two 4th order inverse Chebyschev filters, one for each band. The effects of bonding pads and wires are included in the design. The simulated designed diplexer achieves insertion loss as low as 2.5 dB in the band from 3 to 5 GHz and 3.5 dB in the band from 7 to 9 GHz and occupies an area of 2.25 mm2 (1.5 mm × 1.5 mm).
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
Proceedings of the 37th European Microwave Conference, EUMC. 2007. S. 775-778 4405307 (Proceedings of the 37th European Microwave Conference, EUMC).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Monolithic integrated fully differential antenna diplexer for UWB applications
AU - El Din, M. Gamal
AU - Mertens, Koen
AU - Geck, Bernd
AU - Eul, H.
PY - 2007
Y1 - 2007
N2 - A monolithic integrated UWB diplexer design and measurements will be presented. This diplexer is fabricated on high ohmic silicon substrate. The diplexer is based on two 4th order inverse Chebyschev filters, one for each band. The effects of bonding pads and wires are included in the design. The simulated designed diplexer achieves insertion loss as low as 2.5 dB in the band from 3 to 5 GHz and 3.5 dB in the band from 7 to 9 GHz and occupies an area of 2.25 mm2 (1.5 mm × 1.5 mm).
AB - A monolithic integrated UWB diplexer design and measurements will be presented. This diplexer is fabricated on high ohmic silicon substrate. The diplexer is based on two 4th order inverse Chebyschev filters, one for each band. The effects of bonding pads and wires are included in the design. The simulated designed diplexer achieves insertion loss as low as 2.5 dB in the band from 3 to 5 GHz and 3.5 dB in the band from 7 to 9 GHz and occupies an area of 2.25 mm2 (1.5 mm × 1.5 mm).
UR - http://www.scopus.com/inward/record.url?scp=48349143175&partnerID=8YFLogxK
U2 - 10.1109/EUMC.2007.4405307
DO - 10.1109/EUMC.2007.4405307
M3 - Conference contribution
AN - SCOPUS:48349143175
SN - 9782874870033
T3 - Proceedings of the 37th European Microwave Conference, EUMC
SP - 775
EP - 778
BT - Proceedings of the 37th European Microwave Conference, EUMC
T2 - 37th European Microwave Conference, EUMC
Y2 - 9 October 2007 through 12 October 2007
ER -