Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 611-616 |
| Seitenumfang | 6 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 130 |
| Ausgabenummer | 3-4 |
| Publikationsstatus | Veröffentlicht - Juni 1993 |
| Extern publiziert | Ja |
Abstract
Epitaxial Si1-xGex layers have been grown on patterned Si(001) substrates. Mesa-like structures of 1.4 μm height on the surface limited by inclined {111} planes were used. Structure dimensions between 10 and 0.2 μm were chosen to allow the mesas to relieve elastically under the strained layer. The film growth, the crystallographic perfection and the relaxation of strained Si1-xGex layers were investigated by transmission electron microscopy (TEM) including in situ annealing. The relaxation mechanism and the control of dislocation generation on top of the mesas are discussed.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 130, Nr. 3-4, 06.1993, S. 611-616.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Molecular beam epitaxy of strained Si1-xGex layers on patterned substrates
AU - Bugiel, E.
AU - Dietrich, B.
AU - Osten, H. J.
PY - 1993/6
Y1 - 1993/6
N2 - Epitaxial Si1-xGex layers have been grown on patterned Si(001) substrates. Mesa-like structures of 1.4 μm height on the surface limited by inclined {111} planes were used. Structure dimensions between 10 and 0.2 μm were chosen to allow the mesas to relieve elastically under the strained layer. The film growth, the crystallographic perfection and the relaxation of strained Si1-xGex layers were investigated by transmission electron microscopy (TEM) including in situ annealing. The relaxation mechanism and the control of dislocation generation on top of the mesas are discussed.
AB - Epitaxial Si1-xGex layers have been grown on patterned Si(001) substrates. Mesa-like structures of 1.4 μm height on the surface limited by inclined {111} planes were used. Structure dimensions between 10 and 0.2 μm were chosen to allow the mesas to relieve elastically under the strained layer. The film growth, the crystallographic perfection and the relaxation of strained Si1-xGex layers were investigated by transmission electron microscopy (TEM) including in situ annealing. The relaxation mechanism and the control of dislocation generation on top of the mesas are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0027610250&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(93)90550-G
DO - 10.1016/0022-0248(93)90550-G
M3 - Article
AN - SCOPUS:0027610250
VL - 130
SP - 611
EP - 616
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 3-4
ER -