Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 235-245 |
| Seitenumfang | 11 |
| Fachzeitschrift | physica status solidi (a) |
| Jahrgang | 145 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 15 Feb. 2006 |
| Extern publiziert | Ja |
Abstract
Some aspect of heteroepitaxial growth of SiGe layers on silicon(001) surfaces using molecular beam epitaxy (MBE) are discussed as a model system for strained layer epitaxy. After an introduction about general aspects of pseudomorphic growth some mechanisms for strain relief will be presented. Also different growth modes in heteroepitaxy and some new developments in manipulating the strain by adding a third component or changing the growth mode by using so‐called surfactants are discussed.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: physica status solidi (a), Jahrgang 145, Nr. 2, 15.02.2006, S. 235-245.
Publikation: Beitrag in Fachzeitschrift › Übersichtsarbeit › Forschung › Peer-Review
}
TY - JOUR
T1 - Modification of Growth Modes in Lattice‐Mismatched Epitaxial Systems
T2 - Si/Ge
AU - Osten, H. J.
PY - 2006/2/15
Y1 - 2006/2/15
N2 - Some aspect of heteroepitaxial growth of SiGe layers on silicon(001) surfaces using molecular beam epitaxy (MBE) are discussed as a model system for strained layer epitaxy. After an introduction about general aspects of pseudomorphic growth some mechanisms for strain relief will be presented. Also different growth modes in heteroepitaxy and some new developments in manipulating the strain by adding a third component or changing the growth mode by using so‐called surfactants are discussed.
AB - Some aspect of heteroepitaxial growth of SiGe layers on silicon(001) surfaces using molecular beam epitaxy (MBE) are discussed as a model system for strained layer epitaxy. After an introduction about general aspects of pseudomorphic growth some mechanisms for strain relief will be presented. Also different growth modes in heteroepitaxy and some new developments in manipulating the strain by adding a third component or changing the growth mode by using so‐called surfactants are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0028526034&partnerID=8YFLogxK
U2 - 10.1002/pssa.2211450203
DO - 10.1002/pssa.2211450203
M3 - Review article
AN - SCOPUS:0028526034
VL - 145
SP - 235
EP - 245
JO - physica status solidi (a)
JF - physica status solidi (a)
SN - 0031-8965
IS - 2
ER -