Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 439-442 |
| Seitenumfang | 4 |
| Fachzeitschrift | Technical physics letters |
| Jahrgang | 36 |
| Ausgabenummer | 5 |
| Publikationsstatus | Veröffentlicht - 4 Juni 2010 |
Abstract
We have studied the formation and modification of germanium nanoclusters in GeOx films under the action of pulse laser and isochronous furnace annealing. Pulse treatments were effected using either a Tisapphire laser operating at a wavelength of λ = 800 nm and a pulse duration τ of about 30 fs or a KrF excimer laser with λ = 248 nm and τ = 25 ns. The pulse annealing stimulated both the crystallization of initial amorphous Ge nanoclusters in GeOx matrix and the formation of new nanoclusters. In order to prevent the evaporation of films under the action of laser radiation, the samples were covered with a protective layer of SiNxOy. The proposed approach can be used for the modification of dimensions and phase composition of Ge clusters in GeOx films.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Technical physics letters, Jahrgang 36, Nr. 5, 04.06.2010, S. 439-442.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Modification of Germanium Nanoclusters in GeOx Films during Isochronous Furnace and Pulse Laser Annealing
AU - Marin, D. V.
AU - Volodin, V. A.
AU - Gorokhov, E. B.
AU - Shcheglov, D. V.
AU - Latyshev, A. V.
AU - Vergnat, M.
AU - Koch, J.
AU - Chichkov, B. N.
N1 - Funding information: Acknowledgments. This study was supported in part by the Russian Foundation for Basic Research, project no. 07 08 00438. One of the authors (V.A.V.) is grate ful to the University of Nancy for kindly providing the opportunity of a short term visit and to DAAD Fund for supporting the visit to Laser Zentrum Hannover.
PY - 2010/6/4
Y1 - 2010/6/4
N2 - We have studied the formation and modification of germanium nanoclusters in GeOx films under the action of pulse laser and isochronous furnace annealing. Pulse treatments were effected using either a Tisapphire laser operating at a wavelength of λ = 800 nm and a pulse duration τ of about 30 fs or a KrF excimer laser with λ = 248 nm and τ = 25 ns. The pulse annealing stimulated both the crystallization of initial amorphous Ge nanoclusters in GeOx matrix and the formation of new nanoclusters. In order to prevent the evaporation of films under the action of laser radiation, the samples were covered with a protective layer of SiNxOy. The proposed approach can be used for the modification of dimensions and phase composition of Ge clusters in GeOx films.
AB - We have studied the formation and modification of germanium nanoclusters in GeOx films under the action of pulse laser and isochronous furnace annealing. Pulse treatments were effected using either a Tisapphire laser operating at a wavelength of λ = 800 nm and a pulse duration τ of about 30 fs or a KrF excimer laser with λ = 248 nm and τ = 25 ns. The pulse annealing stimulated both the crystallization of initial amorphous Ge nanoclusters in GeOx matrix and the formation of new nanoclusters. In order to prevent the evaporation of films under the action of laser radiation, the samples were covered with a protective layer of SiNxOy. The proposed approach can be used for the modification of dimensions and phase composition of Ge clusters in GeOx films.
UR - http://www.scopus.com/inward/record.url?scp=77953432655&partnerID=8YFLogxK
U2 - 10.1134/S1063785010050159
DO - 10.1134/S1063785010050159
M3 - Article
AN - SCOPUS:77953432655
VL - 36
SP - 439
EP - 442
JO - Technical physics letters
JF - Technical physics letters
SN - 1063-7850
IS - 5
ER -