Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 14-18 |
| Seitenumfang | 5 |
| Fachzeitschrift | THIN SOLID FILMS |
| Jahrgang | 215 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 30 Juli 1992 |
| Extern publiziert | Ja |
Abstract
A model for Si(100) molecular beam epitaxy (MBE) based on Monte Carlo simulations is applied in order to study the influence of different parameters (substrate temperature, molecular flux density) on the growth kinetics by monitoring the step density of the simulated growth front. The existence of a minimum temperature for smooth two-dimensional film growth with a low step density is discussed. It is shown that such a temperature does not result from the model used. For a sufficiently low deposition rate smooth two-dimensional growth should be possible even at room temperature. The calculations yield an optimal temperature range for growth of low step density films which is in agreement with experimental findings for MBE growth of good quality crystalline layers.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Werkstoffwissenschaften (insg.)
- Metalle und Legierungen
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: THIN SOLID FILMS, Jahrgang 215, Nr. 1, 30.07.1992, S. 14-18.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Modelling of silicon molecular beam epitaxy on Si(100)
AU - Osten, H. J.
PY - 1992/7/30
Y1 - 1992/7/30
N2 - A model for Si(100) molecular beam epitaxy (MBE) based on Monte Carlo simulations is applied in order to study the influence of different parameters (substrate temperature, molecular flux density) on the growth kinetics by monitoring the step density of the simulated growth front. The existence of a minimum temperature for smooth two-dimensional film growth with a low step density is discussed. It is shown that such a temperature does not result from the model used. For a sufficiently low deposition rate smooth two-dimensional growth should be possible even at room temperature. The calculations yield an optimal temperature range for growth of low step density films which is in agreement with experimental findings for MBE growth of good quality crystalline layers.
AB - A model for Si(100) molecular beam epitaxy (MBE) based on Monte Carlo simulations is applied in order to study the influence of different parameters (substrate temperature, molecular flux density) on the growth kinetics by monitoring the step density of the simulated growth front. The existence of a minimum temperature for smooth two-dimensional film growth with a low step density is discussed. It is shown that such a temperature does not result from the model used. For a sufficiently low deposition rate smooth two-dimensional growth should be possible even at room temperature. The calculations yield an optimal temperature range for growth of low step density films which is in agreement with experimental findings for MBE growth of good quality crystalline layers.
UR - http://www.scopus.com/inward/record.url?scp=0026895665&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(92)90694-7
DO - 10.1016/0040-6090(92)90694-7
M3 - Article
AN - SCOPUS:0026895665
VL - 215
SP - 14
EP - 18
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1
ER -