Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 111-113 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi - Rapid Research Letters |
| Jahrgang | 6 |
| Ausgabenummer | 3 |
| Frühes Online-Datum | 25 Jan. 2012 |
| Publikationsstatus | Veröffentlicht - März 2012 |
Abstract
The formation of local highly aluminum-doped (Al-p +) regions by rapid thermal annealing (firing) of screen-printed aluminum strongly depends on the temperature profile and the contact geometry. We measure the local Al-p + layer thickness W Al-p+ as a function of the point and line contact size. Using quantitative yet simple analytical modeling, the time-dependent silicon concentration in the Al melt is described by elementary differential equations. From this we calculate W Al-p+ and find agreement with the measurements. In contrast to the formation of full area Al-p + layers we find a smaller silicon concentration at the end of the firing process compared to the equilibrium concentration. This is a result of the process dynamics such as the dissolution rate of solid silicon and the transport of silicon in the Al melt.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi - Rapid Research Letters, Jahrgang 6, Nr. 3, 03.2012, S. 111-113.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Modeling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum
AU - Müller, Jens
AU - Bothe, Karsten
AU - Gatz, Sebastian
AU - Brendel, Rolf
N1 - Acknowledgements We would like to thank C. Marquardt and T. Neubert for their help with sample processing. This work was supported by the German State of Lower Saxony.
PY - 2012/3
Y1 - 2012/3
N2 - The formation of local highly aluminum-doped (Al-p +) regions by rapid thermal annealing (firing) of screen-printed aluminum strongly depends on the temperature profile and the contact geometry. We measure the local Al-p + layer thickness W Al-p+ as a function of the point and line contact size. Using quantitative yet simple analytical modeling, the time-dependent silicon concentration in the Al melt is described by elementary differential equations. From this we calculate W Al-p+ and find agreement with the measurements. In contrast to the formation of full area Al-p + layers we find a smaller silicon concentration at the end of the firing process compared to the equilibrium concentration. This is a result of the process dynamics such as the dissolution rate of solid silicon and the transport of silicon in the Al melt.
AB - The formation of local highly aluminum-doped (Al-p +) regions by rapid thermal annealing (firing) of screen-printed aluminum strongly depends on the temperature profile and the contact geometry. We measure the local Al-p + layer thickness W Al-p+ as a function of the point and line contact size. Using quantitative yet simple analytical modeling, the time-dependent silicon concentration in the Al melt is described by elementary differential equations. From this we calculate W Al-p+ and find agreement with the measurements. In contrast to the formation of full area Al-p + layers we find a smaller silicon concentration at the end of the firing process compared to the equilibrium concentration. This is a result of the process dynamics such as the dissolution rate of solid silicon and the transport of silicon in the Al melt.
KW - Annealing
KW - Doping
KW - Metal-semiconductor contacts
KW - Silicon
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=84857623464&partnerID=8YFLogxK
U2 - 10.1002/pssr.201105611
DO - 10.1002/pssr.201105611
M3 - Article
AN - SCOPUS:84857623464
VL - 6
SP - 111
EP - 113
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 3
ER -