Modeling the effect of carbon on boron diffusion

Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review

Autorschaft

  • H. Ruecker
  • B. Heinemann
  • W. Roepke
  • G. Fischer
  • G. Lippert
  • H. J. Osten
  • R. Kurps

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten281-284
Seitenumfang4
PublikationsstatusVeröffentlicht - 1997
Extern publiziertJa
Veranstaltung1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, USA / Vereinigte Staaten
Dauer: 8 Sept. 1997 → 10 Sept. 1997

Konferenz

Konferenz1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97
Land/GebietUSA / Vereinigte Staaten
OrtCambridge
Zeitraum8 Sept. 1997 → 10 Sept. 1997

Abstract

Transient diffusion of boron in Si and SiGe can be suppressed effectively by carbon incorporation. In this paper we propose a model which is capable of simulating the effect of grown-in substitutional carbon on boron diffusion during thermal annealing and annealing of implantation damage. The model is applied to transient enhanced diffusion (TED) of boron in npn SiGe heterojunction bipolar transistors (HBTs).

ASJC Scopus Sachgebiete

Zitieren

Modeling the effect of carbon on boron diffusion. / Ruecker, H.; Heinemann, B.; Roepke, W. et al.
1997. 281-284 Beitrag in 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, Massachusetts, USA / Vereinigte Staaten.

Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review

Ruecker, H, Heinemann, B, Roepke, W, Fischer, G, Lippert, G, Osten, HJ & Kurps, R 1997, 'Modeling the effect of carbon on boron diffusion', Beitrag in 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, USA / Vereinigte Staaten, 8 Sept. 1997 - 10 Sept. 1997 S. 281-284.
Ruecker, H., Heinemann, B., Roepke, W., Fischer, G., Lippert, G., Osten, H. J., & Kurps, R. (1997). Modeling the effect of carbon on boron diffusion. 281-284. Beitrag in 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, Massachusetts, USA / Vereinigte Staaten.
Ruecker H, Heinemann B, Roepke W, Fischer G, Lippert G, Osten HJ et al.. Modeling the effect of carbon on boron diffusion. 1997. Beitrag in 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, Massachusetts, USA / Vereinigte Staaten.
Ruecker, H. ; Heinemann, B. ; Roepke, W. et al. / Modeling the effect of carbon on boron diffusion. Beitrag in 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, Massachusetts, USA / Vereinigte Staaten.4 S.
Download
@conference{70a493f87ed6408195e4bee469bea8e1,
title = "Modeling the effect of carbon on boron diffusion",
abstract = "Transient diffusion of boron in Si and SiGe can be suppressed effectively by carbon incorporation. In this paper we propose a model which is capable of simulating the effect of grown-in substitutional carbon on boron diffusion during thermal annealing and annealing of implantation damage. The model is applied to transient enhanced diffusion (TED) of boron in npn SiGe heterojunction bipolar transistors (HBTs).",
author = "H. Ruecker and B. Heinemann and W. Roepke and G. Fischer and G. Lippert and Osten, {H. J.} and R. Kurps",
year = "1997",
language = "English",
pages = "281--284",
note = "1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 ; Conference date: 08-09-1997 Through 10-09-1997",

}

Download

TY - CONF

T1 - Modeling the effect of carbon on boron diffusion

AU - Ruecker, H.

AU - Heinemann, B.

AU - Roepke, W.

AU - Fischer, G.

AU - Lippert, G.

AU - Osten, H. J.

AU - Kurps, R.

PY - 1997

Y1 - 1997

N2 - Transient diffusion of boron in Si and SiGe can be suppressed effectively by carbon incorporation. In this paper we propose a model which is capable of simulating the effect of grown-in substitutional carbon on boron diffusion during thermal annealing and annealing of implantation damage. The model is applied to transient enhanced diffusion (TED) of boron in npn SiGe heterojunction bipolar transistors (HBTs).

AB - Transient diffusion of boron in Si and SiGe can be suppressed effectively by carbon incorporation. In this paper we propose a model which is capable of simulating the effect of grown-in substitutional carbon on boron diffusion during thermal annealing and annealing of implantation damage. The model is applied to transient enhanced diffusion (TED) of boron in npn SiGe heterojunction bipolar transistors (HBTs).

UR - http://www.scopus.com/inward/record.url?scp=0030719566&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030719566

SP - 281

EP - 284

T2 - 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97

Y2 - 8 September 1997 through 10 September 1997

ER -