Modeling lateral parasitic transistors in smart power ICs

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Joerg Oehmen
  • Markus Olbrich
  • Lars Hedrich
  • Erich Barke

Organisationseinheiten

Externe Organisationen

  • Goethe-Universität Frankfurt am Main
  • Institute of Electrical and Electronics Engineers (IEEE)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer1717490
Seiten (von - bis)408-420
Seitenumfang13
FachzeitschriftIEEE Transactions on Device and Materials Reliability
Jahrgang6
Ausgabenummer3
PublikationsstatusVeröffentlicht - Sept. 2006

Abstract

Negative voltages in power stages of junction-isolated Smart Power ICs turn on parasitic bipolar transistors and inject minority carriers into the substrate, which can affect the functionality of the chip. In order to indicate inadmissible substrate currents and to evaluate protection measures, these parasitic transistors have to be included into a postlayout simulation. A methodology has been developed for automatically generating Verilog-A models for these parasites from layout data. These models account for an inhomogeneous current flow and high electron densities in the substrate. A reasonable tradeoff between convergence behavior and accuracy of the model has been found.

ASJC Scopus Sachgebiete

Zitieren

Modeling lateral parasitic transistors in smart power ICs. / Oehmen, Joerg; Olbrich, Markus; Hedrich, Lars et al.
in: IEEE Transactions on Device and Materials Reliability, Jahrgang 6, Nr. 3, 1717490, 09.2006, S. 408-420.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Oehmen J, Olbrich M, Hedrich L, Barke E. Modeling lateral parasitic transistors in smart power ICs. IEEE Transactions on Device and Materials Reliability. 2006 Sep;6(3):408-420. 1717490. doi: 10.1109/TDMR.2006.881506
Oehmen, Joerg ; Olbrich, Markus ; Hedrich, Lars et al. / Modeling lateral parasitic transistors in smart power ICs. in: IEEE Transactions on Device and Materials Reliability. 2006 ; Jahrgang 6, Nr. 3. S. 408-420.
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