Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 234-238 |
| Seitenumfang | 5 |
| Fachzeitschrift | Applied surface science |
| Jahrgang | 91 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 2 Okt. 1995 |
Abstract
An emitter interconnection including the tungsten-filled contacts of a bipolar transistor was investigated for Al/Si/Cu and copper as metallization material. The dependence of local heating and maximum mass flux divergence on the length of the contacts and the distance between the contacts as well as the length of the metallization between the interconnect and the first contact was determined by finite element simulations. Out of the simulations the optimized geometry was determined. It is shown that copper compared to aluminum as metallization material can lead to a higher reliability of power elements. The optimization of the metallization and contact geometry can avoid high mass flux divergences and leads to a higher reliability.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Applied surface science, Jahrgang 91, Nr. 1-4, 02.10.1995, S. 234-238.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Model calculations on a bipolar transistor emitter interconnection with different contact shapes
AU - Weide, K.
AU - Ullmann, J.
AU - Hasse, W.
N1 - Funding Information: We thank SIEMENS HL for the support during these investigations. This work was supported by the federal ministry of education and research, contract number FKZ01M2933A3. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1995/10/2
Y1 - 1995/10/2
N2 - An emitter interconnection including the tungsten-filled contacts of a bipolar transistor was investigated for Al/Si/Cu and copper as metallization material. The dependence of local heating and maximum mass flux divergence on the length of the contacts and the distance between the contacts as well as the length of the metallization between the interconnect and the first contact was determined by finite element simulations. Out of the simulations the optimized geometry was determined. It is shown that copper compared to aluminum as metallization material can lead to a higher reliability of power elements. The optimization of the metallization and contact geometry can avoid high mass flux divergences and leads to a higher reliability.
AB - An emitter interconnection including the tungsten-filled contacts of a bipolar transistor was investigated for Al/Si/Cu and copper as metallization material. The dependence of local heating and maximum mass flux divergence on the length of the contacts and the distance between the contacts as well as the length of the metallization between the interconnect and the first contact was determined by finite element simulations. Out of the simulations the optimized geometry was determined. It is shown that copper compared to aluminum as metallization material can lead to a higher reliability of power elements. The optimization of the metallization and contact geometry can avoid high mass flux divergences and leads to a higher reliability.
UR - http://www.scopus.com/inward/record.url?scp=0029633264&partnerID=8YFLogxK
U2 - 10.1016/0169-4332(95)00124-7
DO - 10.1016/0169-4332(95)00124-7
M3 - Article
AN - SCOPUS:0029633264
VL - 91
SP - 234
EP - 238
JO - Applied surface science
JF - Applied surface science
SN - 0169-4332
IS - 1-4
ER -