Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps

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OriginalspracheEnglisch
Seiten (von - bis)1860-1864
Seitenumfang5
FachzeitschriftMicroelectronics reliability
Jahrgang51
Ausgabenummer9-11
PublikationsstatusVeröffentlicht - Sept. 2011

Abstract

Microbumps consisting of intermetallic compounds like Cu6Sn 5 or Cu3Sn have a longer lifetime during electromigration tests than SnAgCu microbumps. To explain the difference in behavior of Cu-Sn IMCs and SnAgCu during stress test the migration induced mass flux was calculated for Cu3Sn and Cu6Sn5. The results were compared to the mass flux in SnAgCu 305. Furthermore average effective charge values for Cu3Sn and Cu6Sn5 were approximated by comparing the separated movement of Cu and Sn with three different models for an averaged mass flux in the IMCs.

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Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps. / Meinshausen, L.; Weide-Zaage, K.; Frémont, H.
in: Microelectronics reliability, Jahrgang 51, Nr. 9-11, 09.2011, S. 1860-1864.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Meinshausen L, Weide-Zaage K, Frémont H. Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps. Microelectronics reliability. 2011 Sep;51(9-11):1860-1864. doi: 10.1016/j.microrel.2011.06.032
Meinshausen, L. ; Weide-Zaage, K. ; Frémont, H. / Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps. in: Microelectronics reliability. 2011 ; Jahrgang 51, Nr. 9-11. S. 1860-1864.
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AU - Meinshausen, L.

AU - Weide-Zaage, K.

AU - Frémont, H.

N1 - Funding Information: This collaboration was supported by PROCOPE PKZ D/0811472. This program is founded by the DAAD financed by the BMBF and French Ministry of Foreign Affairs. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

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