Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | SC1008 |
| Fachzeitschrift | Japanese Journal of Applied Physics |
| Jahrgang | 58 |
| Ausgabenummer | SC |
| Publikationsstatus | Veröffentlicht - 2019 |
| Extern publiziert | Ja |
Abstract
We present first microscopic evidence on approximately two monolayers of interfacial indium depletion in one-directionally lattice-matched AlInN grown on m-plane GaN as measured by energy dispersive X-ray spectroscopy. Contrary to other reports, we find no significant incorporation of parasitic gallium into the volume material, but only some spreading of gallium across the GaN/AlInN heterointerface. Using a quantitative description of this behaviour, we conclude that the observed effects are not depending on the crystal orientation, nominal stoichiometry and strain state of the AlInN, but rather represent an inherent characteristic of its growth dynamics, related to the differences in metal-nitrogen binding energies of AlN and InN.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Allgemeiner Maschinenbau
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Japanese Journal of Applied Physics, Jahrgang 58, Nr. SC, SC1008, 2019.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Microscopic analysis of interface composition dynamics in m-plane alinn
AU - Horenburg, Philipp
AU - Bremers, Heiko
AU - Imlau, Robert
AU - Rossow, Uwe
AU - Hangleiter, Andreas
N1 - Publisher Copyright: © 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - We present first microscopic evidence on approximately two monolayers of interfacial indium depletion in one-directionally lattice-matched AlInN grown on m-plane GaN as measured by energy dispersive X-ray spectroscopy. Contrary to other reports, we find no significant incorporation of parasitic gallium into the volume material, but only some spreading of gallium across the GaN/AlInN heterointerface. Using a quantitative description of this behaviour, we conclude that the observed effects are not depending on the crystal orientation, nominal stoichiometry and strain state of the AlInN, but rather represent an inherent characteristic of its growth dynamics, related to the differences in metal-nitrogen binding energies of AlN and InN.
AB - We present first microscopic evidence on approximately two monolayers of interfacial indium depletion in one-directionally lattice-matched AlInN grown on m-plane GaN as measured by energy dispersive X-ray spectroscopy. Contrary to other reports, we find no significant incorporation of parasitic gallium into the volume material, but only some spreading of gallium across the GaN/AlInN heterointerface. Using a quantitative description of this behaviour, we conclude that the observed effects are not depending on the crystal orientation, nominal stoichiometry and strain state of the AlInN, but rather represent an inherent characteristic of its growth dynamics, related to the differences in metal-nitrogen binding energies of AlN and InN.
UR - http://www.scopus.com/inward/record.url?scp=85070784155&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/ab079d
DO - 10.7567/1347-4065/ab079d
M3 - Article
AN - SCOPUS:85070784155
VL - 58
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - SC
M1 - SC1008
ER -