Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 8732443 |
| Seiten (von - bis) | 5068-5077 |
| Seitenumfang | 10 |
| Fachzeitschrift | IEEE Transactions on Industry Applications |
| Jahrgang | 55 |
| Ausgabenummer | 5 |
| Publikationsstatus | Veröffentlicht - 2019 |
Abstract
This paper presents the design, fabrication, and characterization on silicon integrated magnetics for high-frequency power applications. The presented device achieves superior characteristics in terms of energy density, electrical resistance, current capability, and inductance versus frequency stability. In order to demonstrate the effectiveness of use of the presented device for high-frequency power applications, it is tested with two different buck point of load (PoL) dc-dc converters, one of them is off-shelf chipset and the other is designed specifically for the microdevice. Experimental measurements show that the microdevices achieve a maximum inductance of about 50 nH, electrical resistance of 300 mΩ, rated current capabilities up to 1 A, and stable L versus f characteristics up to 100 MHz. Also, the PoL buck converters with the microdevices achieve a peak efficiency of up to 82% with a flat efficiency curve at switching frequencies up to 30 MHz while providing tight output voltage regulation (<0.2%) and low temperature rise (40 °C) at the rated current.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE Transactions on Industry Applications, Jahrgang 55, Nr. 5, 8732443, 2019, S. 5068-5077.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Microfabricated Magnetics on Silicon for Point of Load High-Frequency DC-DC Converter Applications
AU - Dinulovic, Dragan
AU - Shousha, Mahmoud
AU - Haug, Martin
AU - Gerfer, Alexander
AU - Beringer, Sebastian
AU - Wurz, Marc Christopher
AU - Thone, Jef
AU - Wens, Mike
PY - 2019
Y1 - 2019
N2 - This paper presents the design, fabrication, and characterization on silicon integrated magnetics for high-frequency power applications. The presented device achieves superior characteristics in terms of energy density, electrical resistance, current capability, and inductance versus frequency stability. In order to demonstrate the effectiveness of use of the presented device for high-frequency power applications, it is tested with two different buck point of load (PoL) dc-dc converters, one of them is off-shelf chipset and the other is designed specifically for the microdevice. Experimental measurements show that the microdevices achieve a maximum inductance of about 50 nH, electrical resistance of 300 mΩ, rated current capabilities up to 1 A, and stable L versus f characteristics up to 100 MHz. Also, the PoL buck converters with the microdevices achieve a peak efficiency of up to 82% with a flat efficiency curve at switching frequencies up to 30 MHz while providing tight output voltage regulation (<0.2%) and low temperature rise (40 °C) at the rated current.
AB - This paper presents the design, fabrication, and characterization on silicon integrated magnetics for high-frequency power applications. The presented device achieves superior characteristics in terms of energy density, electrical resistance, current capability, and inductance versus frequency stability. In order to demonstrate the effectiveness of use of the presented device for high-frequency power applications, it is tested with two different buck point of load (PoL) dc-dc converters, one of them is off-shelf chipset and the other is designed specifically for the microdevice. Experimental measurements show that the microdevices achieve a maximum inductance of about 50 nH, electrical resistance of 300 mΩ, rated current capabilities up to 1 A, and stable L versus f characteristics up to 100 MHz. Also, the PoL buck converters with the microdevices achieve a peak efficiency of up to 82% with a flat efficiency curve at switching frequencies up to 30 MHz while providing tight output voltage regulation (<0.2%) and low temperature rise (40 °C) at the rated current.
KW - DC-DC converters
KW - high switching frequency
KW - magnetics on silicon
KW - microinductor
KW - microtransformer
KW - point of load (PoL)
KW - power conversion
KW - power transformer
KW - switched-mode power supply
UR - http://www.scopus.com/inward/record.url?scp=85071306554&partnerID=8YFLogxK
U2 - 10.1109/TIA.2019.2921523
DO - 10.1109/TIA.2019.2921523
M3 - Article
AN - SCOPUS:85071306554
VL - 55
SP - 5068
EP - 5077
JO - IEEE Transactions on Industry Applications
JF - IEEE Transactions on Industry Applications
SN - 0093-9994
IS - 5
M1 - 8732443
ER -