Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 215-217 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 32 |
| Ausgabenummer | 1-2 SPEC. ISS. |
| Publikationsstatus | Veröffentlicht - 1 Mai 2006 |
Abstract
We present measurements of single-electron tunneling in a vertical GaAs/AlGaAs double-barrier resonant-tunneling device with a low emitter doping. The transport spectrum of our sample exhibits a series of differential conductance peaks which experience an exponential shift to higher voltages with magnetic fields beyond a critical magnetic field. We attribute this effect to a metal-insulator transition in our device. A detailed analysis of the temperature-dependence of this effect is shown.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 32, Nr. 1-2 SPEC. ISS., 01.05.2006, S. 215-217.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Metal-insulator-transition studied by single-electron tunneling
AU - Könemann, Jens
AU - Haug, R. J.
PY - 2006/5/1
Y1 - 2006/5/1
N2 - We present measurements of single-electron tunneling in a vertical GaAs/AlGaAs double-barrier resonant-tunneling device with a low emitter doping. The transport spectrum of our sample exhibits a series of differential conductance peaks which experience an exponential shift to higher voltages with magnetic fields beyond a critical magnetic field. We attribute this effect to a metal-insulator transition in our device. A detailed analysis of the temperature-dependence of this effect is shown.
AB - We present measurements of single-electron tunneling in a vertical GaAs/AlGaAs double-barrier resonant-tunneling device with a low emitter doping. The transport spectrum of our sample exhibits a series of differential conductance peaks which experience an exponential shift to higher voltages with magnetic fields beyond a critical magnetic field. We attribute this effect to a metal-insulator transition in our device. A detailed analysis of the temperature-dependence of this effect is shown.
KW - Metal-insulator transitions
KW - Quantum dots
KW - Single-electron tunneling
UR - http://www.scopus.com/inward/record.url?scp=33646174286&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2005.12.039
DO - 10.1016/j.physe.2005.12.039
M3 - Article
AN - SCOPUS:33646174286
VL - 32
SP - 215
EP - 217
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-2 SPEC. ISS.
ER -